High gain x bandwidth product over 140-GHz planar junction AlInAs avalanche photodiodes

被引：47

作者：

Rouvie, Anne ^{[1
]}

Carpentier, Daniele ^{[1
]}

Lagay, Nadine ^{[1
]}

Decobert, Jean ^{[1
]}

Pommereau, Frederic ^{[1
]}

Achouche, Mohand ^{[1
]}

机构：

[1] Alcatel Thales III V Lab, F-91460 Marcoussis, France

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 5-8期

关键词：

AlInAs; avalanche photodiodes (APDs); dark current; excess noise factor; gain-bandwidth product; multiplication;

D O I：

10.1109/LPT.2008.918229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter demonstrates a planar junction GaInAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiNx antireflection coating. The combined properties of very low dark current (I-dark(M = 10) = 17 nA), low excess noise factor (f (M = 10) = 3.5), and high gain x bandwidth product over 140 GHz were simultaneously achieved with a high primary responsivity of 0.95 A/W at 1.55 mu m.

引用

页码：455 / 457

页数：3

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