In situ high-temperature scanning tunneling microscopy study of bilayer graphene growth on 6H-SiC(0001)

被引：3

作者：

Murata, Yuya ^{[1
]}

Petrova, V. ^{[2
]}

Petrov, I. ^{[2
]}

Kodambaka, S. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 16期

关键词：

Graphene; High-temperature STM; SiC; In-situ microscopy; Growth kinetics; EPITAXIAL-GRAPHENE;

D O I：

10.1016/j.tsf.2012.03.040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using in situ high-temperature (1395 K), ultra-high vacuum, scanning tunneling microscopy (STM), we investigated the growth of bilayer graphene on 6H-SiC(0001). From the STM images, we measured areal coverages of SiC and graphene as a function of annealing time and found that graphene grows at the expense of SiC. Graphene domains were observed to grow, at comparable rates, at (I) graphene-free SiC step edges, (II) graphene-SiC interfaces, and (III) the existing graphene domain edges. Based upon our results, we suggest that the rate-limiting step controlling bilayer graphene growth is the desorption of Si from the substrate. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：5289 / 5293

页数：5

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