Suppression of parasitic lasing in high energy, high repetition rate Ti:sapphire laser amplifiers

被引：31

作者：

Laux, Sebastien ^{[1
]}

Lureau, Francois ^{[1
]}

Radier, Christophe ^{[1
]}

Chalus, Olivier ^{[1
]}

Caradec, Frederic ^{[1
]}

Casagrande, Olivier ^{[1
]}

Pourtal, Emilie ^{[1
]}

Simon-Boisson, Christophe ^{[1
]}

Soyer, Francoise ^{[2
]}

Lebarny, Pierre ^{[2
]}

机构：

[1] THALES Optron SA, Laser Solut Unit, F-78995 Elancourt, France

[2] THALES Res & Technol, Dept Chem, F-91767 Palaiseau, France

来源：

OPTICS LETTERS | 2012年 / 37卷 / 11期

关键词：

SAPPHIRE AMPLIFIER; SYSTEM; TI;

D O I：

10.1364/OL.37.001913

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Transverse parasitic lasing is well known for limiting the signal gain and the pulse energy that can be extracted from Ti:sapphire petawatt amplifiers. We have developed a technique for suppressing these parasitic lasing modes based on perfect refractive index-matching liquid doped with a broad-bandwidth absorber to suppress the transverse lasing while ensuring proper heat removal from the Ti:sapphire crystal. The 800 nm laser output with a bandwidth of 41 nm (FWHM) and peak energy of 22.7 J at a repetition rate of 1 Hz is demonstrated. (C) 2012 Optical Society of America

引用

页码：1913 / 1915

页数：3

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