Suppression of parasitic lasing in high energy, high repetition rate Ti:sapphire laser amplifiers

被引：31
|
作者：
Laux, Sebastien [1 ]
Lureau, Francois [1 ]
Radier, Christophe [1 ]
Chalus, Olivier [1 ]
Caradec, Frederic [1 ]
Casagrande, Olivier [1 ]
Pourtal, Emilie [1 ]
Simon-Boisson, Christophe [1 ]
Soyer, Francoise [2 ]
Lebarny, Pierre [2 ]
机构：
[1] THALES Optron SA, Laser Solut Unit, F-78995 Elancourt, France
[2] THALES Res & Technol, Dept Chem, F-91767 Palaiseau, France
来源：
OPTICS LETTERS | 2012年 / 37卷 / 11期
关键词：
SAPPHIRE AMPLIFIER; SYSTEM; TI;
D O I：
10.1364/OL.37.001913
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Transverse parasitic lasing is well known for limiting the signal gain and the pulse energy that can be extracted from Ti:sapphire petawatt amplifiers. We have developed a technique for suppressing these parasitic lasing modes based on perfect refractive index-matching liquid doped with a broad-bandwidth absorber to suppress the transverse lasing while ensuring proper heat removal from the Ti:sapphire crystal. The 800 nm laser output with a bandwidth of 41 nm (FWHM) and peak energy of 22.7 J at a repetition rate of 1 Hz is demonstrated. (C) 2012 Optical Society of America
引用
收藏
页码：1913 / 1915
页数：3
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