Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor

被引：12

作者：

Tsai, JH ^{[1
]}

机构：

[1] Chien Kuo Inst Technol, Dept Elect Engn, Chang Hua, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 17期

关键词：

D O I：

10.1063/1.125113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An AlGaAs/GaAs/InGaAs resonant-tunneling heterostructure-emitter bipolar transistor with negative-differential-resistance (NDR) behavior has been fabricated and demonstrated. Typical device performances with current gain of 140 incorporating an N-shaped NDR with a peak-to-valley current ratio of 5.3 are obtained at room temperature. The NDR behavior is believed to mainly result from a double-barrier-like resonant-tunneling effect. In other words, the on and off electron resonant tunneling from a depleted GaAs emitter through an InGaAs quantum well and ultrathin base toward a collector layer yield the interesting NDR behavior. Consequently, the proposed device provides a good potential for applications in amplifiers, low-power consumption, and logic currents. (C) 1999 American Institute of Physics. [S0003-6951(99)04943-8].

引用

页码：2668 / 2670

页数：3

共 13 条

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