Electroless Cu deposition on atomic layer deposited Ru as novel seed formation process in through-Si vias

被引：50

作者：

Inoue, Fumihiro ^{[1
,2
]}

Philipsen, Harold ^{[1
]}

Radisic, Aleksandar ^{[1
]}

Armini, Silvia ^{[1
]}

Civale, Yann ^{[1
]}

Leunissen, Peter ^{[1
]}

Kondo, Muneharu ^{[3
]}

Webb, Eric ^{[3
]}

Shingubara, Shoso ^{[2
]}

机构：

[1] IMEC, Leuven, Belgium

[2] Kansai Univ, Suita, Osaka, Japan

[3] MLI, Moses Lake, WA 98837 USA

来源：

ELECTROCHIMICA ACTA | 2013年 / 100卷

关键词：

Electroless deposition; Through-Si via; Seed layer; Ruthenium; COPPER DEPOSITION; ELECTRODEPOSITION; BARRIER; NUCLEATION; TSVS; RUTHENIUM; FILM;

D O I：

10.1016/j.electacta.2013.03.106

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

High aspect ratio through Si vias (phi 2 mu m, depth 30 mu m) have been filled completely by Cu electroplating using an electroless deposited Cu seed layer. The electroless Cu deposition was carried out on ALD-Ru; the time transient of the mixed potential on Ru showed a catalyst type of behavior. The ELD-Cu, which was deposited inside TSVs along their sidewalls, was defect free and worked as a seed layer for electrodeposition of Cu to fill the structure. With a conventional method, such as PVD-Cu, it is challenging to deposit a seed in such structures. The adhesion strength of this ELD-Cu film on ALD-Ru was measured to be >100 MPa. These coupon-scale results show the feasibility of electroless deposition in TSV processing. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：203 / 211

页数：9

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