Monolayer nitridation of Si(001) surfaces

被引：7
|
作者：
Morita, Y
Ishida, T
Tokumoto, H
机构：
[1] Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3058562, Japan
[2] Natl Inst Adv Ind Sci & Technol, AIST, Tsukuba, Ibaraki 3058562, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 4B期
关键词：
scanning tunneling microscopy; silicon nitride; nitridation; silicon; surface structure;
D O I：
10.1143/JJAP.41.2459
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Well-ordered nitrogen-covered Si(001) surfaces were formed for the first time by thermal nitridation using an N-2/H-2 gas mixture. The scanning tunneling microscope images showed clear Si(001)-2 x 2 reconstruction over the entire surface. The ordered structure of the nitrided surfaces can be explained by a model in which the surface nitridation by N-2 and the termination of the remaining Si dangling bonds by hydrogen atoms occur simultaneously to minimize the surface free energy during the nitridation reaction.
引用
收藏
页码：2459 / 2462
页数：4
相关论文
共 50 条
  • [21] Anisotropy of mass transport on Si(001) surfaces heated with direct current
    Nielsen, JF
    Pettersen, MS
    Pelz, JP
    SURFACE SCIENCE, 2001, 480 (1-2) : 84 - 96
  • [22] Tb silicide nanowire growth on planar and vicinal Si(001) surfaces
    Appelfeller, Stephan
    Kuls, Stefan
    Daehne, Mario
    SURFACE SCIENCE, 2015, 641 : 180 - 190
  • [23] Scanning tunneling microscopy study of hydrogen-terminated Si(001) surfaces after wet cleaning
    Arima, K
    Endo, K
    Kataoka, T
    Oshikane, Y
    Inoue, H
    Mori, Y
    SURFACE SCIENCE, 2000, 446 (1-2) : 128 - 136
  • [24] Bismuth-induced structures on Si(001) surfaces
    Miki, K
    Owen, JHG
    Bowler, DR
    Briggs, GAD
    Sakamoto, K
    SURFACE SCIENCE, 1999, 421 (03) : 397 - 418
  • [25] DC heating-induced step instability on Si(001) vicinal surfaces
    Nishimura, H
    Minoda, H
    Tanishiro, Y
    Yagi, K
    SURFACE SCIENCE, 1999, 442 (02) : L1006 - L1012
  • [26] Yb and Nd growth on Si(001)
    Katkov, MV
    Nogami, J
    SURFACE SCIENCE, 2003, 524 (1-3) : 129 - 136
  • [27] A first principles study of sub-monolayer Ge on Si(001)
    Oviedo, J
    Bowler, DR
    Gillan, MJ
    SURFACE SCIENCE, 2002, 515 (2-3) : 483 - 490
  • [28] Resistless patterning of a chlorine monolayer on a Si(001) surface with an electron beam
    Jeon, C.
    Hwang, H-N.
    Shin, H. -J.
    Park, C. -Y.
    Hwang, C. -C.
    APPLIED SURFACE SCIENCE, 2011, 257 (21) : 8794 - 8797
  • [29] The influence of monolayer coverages of Sb on the optical anisotropy of vicinal Si(001)
    Power, JR
    Farrell, T
    Gerber, P
    Chandola, S
    Weightman, P
    McGilp, JF
    SURFACE SCIENCE, 1997, 372 (1-3) : 83 - 90
  • [30] Nucleation of homoepitaxial Si chains on Si(001) at room temperature
    vanWingerden, J
    Haye, MJ
    Scholte, PMLO
    Tuinstra, F
    SURFACE SCIENCE, 1997, 377 (1-3) : 1006 - 1009
12345