Monolayer nitridation of Si(001) surfaces

被引：7
作者：
Morita, Y
Ishida, T
Tokumoto, H
机构：
[1] Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3058562, Japan
[2] Natl Inst Adv Ind Sci & Technol, AIST, Tsukuba, Ibaraki 3058562, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 4B期
关键词：
scanning tunneling microscopy; silicon nitride; nitridation; silicon; surface structure;
D O I：
10.1143/JJAP.41.2459
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Well-ordered nitrogen-covered Si(001) surfaces were formed for the first time by thermal nitridation using an N-2/H-2 gas mixture. The scanning tunneling microscope images showed clear Si(001)-2 x 2 reconstruction over the entire surface. The ordered structure of the nitrided surfaces can be explained by a model in which the surface nitridation by N-2 and the termination of the remaining Si dangling bonds by hydrogen atoms occur simultaneously to minimize the surface free energy during the nitridation reaction.
引用
收藏
页码：2459 / 2462
页数：4
相关论文
共 21 条
[1]   THERMAL NITRIDATION OF SI(100)-2X1 SURFACE BY NH3 - XPS RESULTS [J].
BISCHOFF, JL ;
KUBLER, L ;
BOLMONT, D .
SURFACE SCIENCE, 1989, 209 (1-2) :115-130
[2]   A LEED, AES AND TDS STUDY OF VERY THIN NITRIDE FILM GROWTH ON SI(100) BY DIRECT THERMAL NITRIDATION IN NH3 [J].
GLACHANT, A ;
SAIDI, D ;
DELORD, JF .
SURFACE SCIENCE, 1986, 168 (1-3) :672-680
[3]   Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy [J].
Hansch, W ;
Nakajima, A ;
Yokoyama, S .
APPLIED PHYSICS LETTERS, 1999, 75 (11) :1535-1537
[4]   NITRIDATION OF SILICON AND OXIDIZED-SILICON [J].
HAYAFUJI, Y ;
KAJIWARA, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2102-2108
[5]   STUDY OF NITRIDATION OF SILICON SURFACES BY LOW-ENERGY ELECTRON-DIFFRACTION AND AUGE ELECTRON SPECTROSCOPY [J].
HECKINGBOTTOM, R ;
WOOD, PR .
SURFACE SCIENCE, 1973, 36 (02) :594-605
[6]   THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES [J].
ITO, T ;
NOZAKI, T ;
ARAKAWA, H ;
SHINODA, M .
APPLIED PHYSICS LETTERS, 1978, 32 (05) :330-331
[7]   PLASMA-ENHANCED THERMAL NITRIDATION OF SILICON [J].
ITO, T ;
KATO, I ;
NOZAKI, T ;
NAKAMURA, T ;
ISHIKAWA, H .
APPLIED PHYSICS LETTERS, 1981, 38 (05) :370-372
[8]   VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J].
ITO, T ;
HIJIYA, S ;
NOZAKI, T ;
ARAKAWA, H ;
SHINODA, M ;
FUKUKAWA, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :448-452
[9]   Si(001) surface variation with annealing in ambient H2 [J].
Komeda, T ;
Kumagai, Y .
PHYSICAL REVIEW B, 1998, 58 (03) :1385-1391
[10]   GENERAL COMPARISON OF THE SURFACE PROCESSES INVOLVED IN NITRIDATION OF SI(100)-2X1 BY NH3 AND IN SINX FILM DEPOSITION - A PHOTOEMISSION-STUDY [J].
KUBLER, L ;
BISCHOFF, JL ;
BOLMONT, D .
PHYSICAL REVIEW B, 1988, 38 (18) :13113-13123
123