Design methodology for ultra low-power analog circuits using next generation BSIM6 MOSFET compact model

被引：30

作者：

Mangla, A. ^{[1
]}

Chalkiadaki, M. -A. ^{[1
]}

Fadhuile, F. ^{[2
]}

Taris, T. ^{[2
]}

Deval, Y. ^{[2
]}

Enz, C. C. ^{[1
,3
]}

机构：

[1] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

[2] IMS Bordeaux, Bordeaux, France

[3] Swiss Ctr Elect & Microtechnol CSEM, Neuchatel, Switzerland

来源：

MICROELECTRONICS JOURNAL | 2013年 / 44卷 / 07期

基金：

瑞士国家科学基金会;

关键词：

Design methodology; BSIM6; Low power; RF integrated circuit design;

D O I：

10.1016/j.mejo.2013.02.022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The recently proposed BSIM6 bulk MOSFET compact model is set to replace the hitherto widely used BSIM3 and BSIM4 models as the de-facto industrial standard. Unlike its predecessors which were threshold voltage based, the BSIM6 core is charge based and thus physically continuous at all levels of inversion from linear operation to saturation. Hence, it lends itself conveniently for the use of a design methodology suited for low-power analog circuit design based on the inversion coefficient (IC) that has been extensively used in conjugation with the EIN model and allows to make simple calculations of, for example, transconductance efficiency, gain bandwidth product, etc. This methodology helps to make a near-optimal selection of transistor dimensions and operating points even in moderate and weak inversion regions. This paper will discuss the IC based design methodology and its application to the next generation BSIM6 compact MOSFET model. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：570 / 575

页数：6