Carrier confinement in an ultrathin barrier GaAs/AlAs superlattice probed by capacitance-voltage measurements

被引：9

作者：

Chiquito, AJ ^{[1
]}

Pusep, YA ^{[1
]}

Mergulhao, S ^{[1
]}

Galzerani, JC ^{[1
]}

机构：

[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 01期

基金：

巴西圣保罗研究基金会;

关键词：

superlattices; capacitance; miniband; localized states;

D O I：

10.1016/S1386-9477(01)00222-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The capacitance-voltage characteristics of (GaAs)(m)/(AlAs)(n) superlattices and of a GaAs/AlGaAs Multiple quantum well system were used as a tool to probe the homogeneity of the studied samples. Evidences of a strong electron localization in the superlattices even with the presence of minibands were found. We interpret this result taking into account the presence of local inhomogeneities in the superlattices which causes the breakdown of the coherence of the miniband transport and therefore, give rise to the electron localization. In order to support this conclusion we numerically calculate the capacitance of the superlattices assuming a localization center near the region where electron confinement takes place and the results were found in good agreement with the measured capacitance. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：36 / 42

页数：7

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