Impact of Trap Behavior on Random Telegraph Noise in High-k/Metal Gate pMOSFETs

In this study, the impact of trap localization for aluminum ion implantation (Al I/I) with different energy and doses on random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) was investigated. Although the Al I/I can reduce oxide trap densities, because the Al filled the defects and formed a thin Al2O3 layer. But, when energy and doses increased, higher Al concentration will cause gate tunneling current density (J(G)) is occurred. In addition, we were also observed that the trap position (X-T) in the control device was lower, due to Al not diffusion too deeply near SiO2/Si interface.