Characterization of Silicon Crystals Grown from Melt in a Granulate Crucible

被引：6

作者：

Dadzis, K. ^{[1
]}

Menzel, R. ^{[1
]}

Juda, U. ^{[1
]}

Irmscher, K. ^{[1
]}

Kranert, C. ^{[2
,4
]}

Mueller, M. ^{[3
]}

Ehrl, M. ^{[3
]}

Weingaertner, R. ^{[4
]}

Reimann, C. ^{[2
,4
]}

Abrosimov, N. ^{[1
]}

Riemann, H. ^{[1
]}

机构：

[1] Leibniz Inst Kristallzuchtung IKZ, Berlin, Germany

[2] Fraunhofer THM, Freiberg, Germany

[3] TU Freiberg, Inst Appl Phys, Freiberg, Germany

[4] Fraunhofer IISB, Erlangen, Germany

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2020年 / 49卷 / 09期

关键词：

Crystal growth; silicon; defect characterization; carrier lifetime; IMPURITIES; RESISTIVITY; SEGREGATION; DEFECTS; INGOTS; ETCH;

D O I：

10.1007/s11664-020-08309-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth of silicon crystals from a melt contained in a granulate crucible significantly differs from the classical growth techniques because of the granulate feedstock and the continuous growth process. We performed a systematic study of impurities and structural defects in several such crystals with diameters up to 60 mm. The possible origin of various defects is discussed and attributed to feedstock (concentration of transition metals), growth setup (carbon concentration), or growth process (dislocation density), showing the potential for further optimization. A distinct correlation between crystal defects and bulk carrier lifetime is observed. A bulk carrier lifetime with values up to 600 mu s on passivated surfaces of dislocation-free parts of the crystal is currently achieved.

引用

页码：5120 / 5132

页数：13

共 36 条

[1] Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental results [J].