Band Engineering of Dirac Surface States in Topological-Insulator-Based van der Waals Heterostructures

被引：32

作者：

Chang, Cui-Zu ^{[1
,2
]}

Tang, Peizhe ^{[1
]}

Feng, Xiao ^{[1
,2
]}

Li, Kang ^{[2
]}

Ma, Xu-Cun ^{[1
,4
]}

Duan, Wenhui ^{[1
,3
,4
]}

He, Ke ^{[1
,4
]}

Xue, Qi-Kun ^{[1
,2
,4
]}

机构：

[1] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[3] Tsinghua Univ, Inst Adv Study, Beijing 100084, Peoples R China

[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China

来源：

PHYSICAL REVIEW LETTERS | 2015年 / 115卷 / 13期

基金：

中国国家自然科学基金;

关键词：

CONE; REALIZATION; BI2SE3; BI2TE3;

D O I：

10.1103/PhysRevLett.115.136801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The existence of a gapless Dirac surface band of a three dimensional (3D) topological insulator (TI) is guaranteed by the nontrivial topological character of the bulk band, yet the surface band dispersion is mainly determined by the environment near the surface. In this Letter, through in situ angle-resolved photoemission spectroscopy and first-principles calculation on 3D TI-based van der Waals heterostructures, we demonstrate that one can engineer the surface band structures of 3D TIs by surface modifications without destroying their topological nontrivial property. The result provides an accessible method to independently control the surface and bulk electronic structures of 3D TIs, and sheds light on designing artificial topological materials for electronic and spintronic purposes.

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页数：5

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