Origin of negative magnetoresistance of GaAs/(Ga,Mn)As core-shell nanowires

被引：13

作者：

Butschkow, Christian ^{[1
]}

Reiger, Elisabeth ^{[1
]}

Rudolph, Andreas ^{[1
]}

Geissler, Stefan ^{[1
]}

Neumaier, Daniel ^{[1
]}

Soda, Marcello ^{[1
]}

Schuh, Dieter ^{[1
]}

Woltersdorf, Georg ^{[1
]}

Wegscheider, Werner ^{[2
]}

Weiss, Dieter ^{[1
]}

机构：

[1] Univ Regensburg, Inst Expt & Appl Phys, D-93053 Regensburg, Germany

[2] ETH, CH-8093 Zurich, Switzerland

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 24期

关键词：

MAGNETOTRANSPORT PROPERTIES; (GA; MN)AS;

D O I：

10.1103/PhysRevB.87.245303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We explore the anisotropy of the magnetoresistance of individual GaAs/(Ga,Mn)As core-shell nanowires which feature a strong negative magnetoresistance (NMR) and a very large magnetic anisotropy field. Our analysis of the magnetoresistance shows that the resistance anisotropy is dominated by the effective magnetic field and that the origin of the NMR is related to spin scattering rather than to weak localization in (Ga,Mn) As core-shell nanowires.

引用

页数：6

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