The effect of composition on structural and optical properties of ZnSe alloys

被引:24
作者
Abdel-Rahim, M. A. [1 ]
Hafiz, M. M. [1 ]
Alwany, A. Elwhab B. [2 ]
机构
[1] Assiut Univ, Fac Sci, Dept Phys, Assiut, Egypt
[2] Ibb Univ, Ibb, Yemen
关键词
ZnxSe100-x thin films; Structure; Optical properties; ELECTRICAL-PROPERTIES; CRYSTALLIZATION; ABSORPTION; CONDUCTION; BEHAVIOR; GLASSES; STATES;
D O I
10.1016/j.optlastec.2012.06.044
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Bulk of ZnxSe100-x (x=10,20 and 40 at%) was prepared by the usual quench melt technique. Thin films of these compositions were prepared by thermal evaporation. Differential thermal analyses (DTA) on powder samples under non-isothermal conditions show that the glass transition temperature T-g increased and crystallization temperature T-p decreased with increasing Zn content. The average particle size of the crystalline ZnSe phase deduced from X-ray diffraction (XRD) patterns show a decrease with increasing Zn content. These results were confirmed with the results obtained by scanning electron microscopy (SEM). The optical properties of ZnxSe100-x have been studied at a wavelength range (300-900 nm), and it was found that the optical band gap (E-g) increases with increasing Zn concentration in the ZnxSe100-x system. The results can be interpreted on the basis of the chemical bond approach proposed by Bicermo and Ovshinsky. The value of the extinction coefficient (k) decreases with increasing wavelength and Zn content. On the other hand, the optical energy gap (E-g) decreased with increasing the annealing temperature for Zn10Se90 thin films. These results can be interpreted by the Davis and Motte model. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:88 / 94
页数:7
相关论文
共 33 条
[1]   Influence of composition on optical and electrical properties of Ge-Se-In thin films [J].
Abdel-Rahim, M. A. ;
Hafiz, M. M. ;
El-Nahass, M. M. ;
Shamekh, A. M. .
PHYSICA B-CONDENSED MATTER, 2007, 387 (1-2) :383-391
[2]   Influence of annealing on the structure and optical properties of Zn40Se60 thin films [J].
Abdel-Rahim, M. A. ;
Hafiz, M. M. ;
Elwhab, A. ;
Alwany, B. .
OPTICS AND LASER TECHNOLOGY, 2012, 44 (04) :1116-1121
[3]   Annealing dependence of optical and electrical properties of Ga8As46Te46 thin films [J].
Abdel-Rahim, MA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1999, 60 (01) :29-39
[4]   Preparation and properties of Ge-Ga-S glasses for laser hosts [J].
Abe, K ;
Takebe, H ;
Morinaga, K .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1997, 212 (2-3) :143-150
[5]   CHEMICAL-BOND APPROACH TO THE STRUCTURES OF CHALCOGENIDE GLASSES WITH REVERSIBLE SWITCHING PROPERTIES [J].
BICERANO, J ;
OVSHINSKY, SR .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 74 (01) :75-84
[6]   VARIATION OF OPTICAL GAP OF THICK AMORPHOUS SELENIUM FILM ON HEAT-TREATMENT [J].
CHAUDHURI, S ;
BISWAS, SK ;
CHOUDHURY, A ;
GOSWAMI, K .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 54 (1-2) :179-182
[7]   CRYSTALLIZATION OF AL23TE77 GLASSES [J].
COLMENERO, J ;
BARANDIARAN, JM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 30 (03) :263-271
[8]   Optical properties of AsSe1.5-xTex glassy system [J].
El-Den, MB ;
El-Nahass, MM .
OPTICS AND LASER TECHNOLOGY, 2003, 35 (05) :335-340
[9]  
ELSHAFIA A, 1999, PHYSICA B, V69, P269
[10]   STRUCTURAL STUDY OF VARIOUS (AS-GE-SE-TE) AMORPHOUS-CHALCOGENIDE GLASSES USING X-RAY ABSORPTION-SPECTROSCOPY [J].
FLANK, AM ;
BAZIN, D ;
DEXPERT, H ;
LAGARDE, P ;
HERVO, C ;
BARRAUD, JY .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 91 (03) :306-314