Characterization of CuAlO2 thin film prepared by rapid thermal annealing of an Al2O3/Cu2O/sapphire structure

被引：41
|
作者：
Shy, JH [1 ]
Tseng, BH [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 80424, Taiwan
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2005年 / 66卷 / 11期
关键词：
oxides; thin films; CuAlO2;
D O I：
10.1016/j.jpcs.2005.09.062
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
CuAlO2 thin film was successfully prepared by rapid thermal annealing of an Al2O3/Cu2O/sapphire structure in air above 1000 degrees C. The film was mostly with single crystalline structure as verified by X-ray diffraction methods. We found that crystal quality and electrical conductivity of the films were affected by the cooling rate after annealing. The highest conductivity obtained in this work was 0.57 S/cm. Optical gap of this film was determined to be 3.75 eV. (c) 2005 Elsevier Ltd. All rights reserved.
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收藏
页码：2123 / 2126
页数：4
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