Floating Electron States in Covalent Semiconductors

被引:50
作者
Matsushita, Yu-ichiro [1 ]
Furuya, Shinnosuke [1 ]
Oshiyama, Atsushi [1 ]
机构
[1] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
关键词
PSEUDOPOTENTIALS; GRAPHITE; APPROXIMATION; PREDICTION; BAND;
D O I
10.1103/PhysRevLett.108.246404
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report first-principles electronic-structure calculations that clarify the floating nature of electron states in covalent semiconductors. It is found that wave functions of several conduction-and valence-band states, including the conduction-band minima, do not distribute near atomic sites, as was taken for granted, but float in interstitial channels in most semiconductors. The directions and shapes of the interstitial channels depend on the crystal symmetry so that mysterious variation of the energy gaps in SiC polymorphs is naturally explained by considering the floating nature.
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页数:5
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