High-temperature wetting and the work of adhesion in metal/oxide systems

被引:84
作者
Saiz, Eduardo [1 ]
Cannon, Rowland M. [1 ]
Tomsia, Antoni P. [1 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
关键词
oxygen adsorption; metal-ceramic interfaces; contact angle; spreading; alumina;
D O I
10.1146/annurev.matsci.38.060407.132443
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This article reviews data on wetting and the work of adhesion in metal/oxide systems at high temperatures in terms of proposed mutual adsorption models. Favorable adsorption energies can induce changes, especially near the high- and low-p(O-2) limits of the coexistence range that often mimic bulk oxidation or reduction reactions. However, in some systems in intermediate range Of P(02) exists wherein all the interfaces are stoichiometric and the contact angle and work of adhesion are independent of p(O-2). A revision of existing data for several pure metal/Al2O3 systems affirms predicted trends and reveals that the contact angle is 110 degrees-130 degrees at the plateau and drops to or below 90 degrees at the high- and low-p(O-2) limits. This article also compares the data with recent advances in the characterization and modeling of metal-ceramic interfaces at the atomic level.
引用
收藏
页码:197 / 226
页数:30
相关论文
共 162 条
[1]  
Adamson A. W., 1990, Physical Chemistry of Surfaces
[2]  
[Anonymous], CERAMIC MICROSTRUCTU, DOI [10.1007/978-1-4615-5393-9_5, DOI 10.1007/978-1-4615-5393-9_5]
[3]   Gibbs' adsorption at α alumina-copper interfaces [J].
Backhaus-Ricoult, M .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2003, 23 (15) :2747-2759
[4]   Solid-state reactivity at heterophase interfaces [J].
Backhaus-Ricoult, M .
ANNUAL REVIEW OF MATERIALS RESEARCH, 2003, 33 :55-90
[5]   Changes in Cu-silica interfacial chemistry with oxygen chemical potential [J].
Backhaus-Ricoult, M ;
Samet, L ;
Thomas, M ;
Trichet, MF ;
Imhoff, D .
ACTA MATERIALIA, 2002, 50 (16) :4191-4204
[6]   ANISOTROPIC CALCIUM SEGREGATION TO THE SURFACE OF AL2O3 [J].
BAIK, S ;
WHITE, CL .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1987, 70 (09) :682-688
[7]   SEGREGATION OF MG TO THE (0001) SURFACE OF DOPED SAPPHIRE [J].
BAIK, S ;
FOWLER, DE ;
BLAKELY, JM ;
RAJ, R .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1985, 68 (05) :281-286
[8]   Ab initio calculations on the Al2O3(0001) surface [J].
Batyrev, I ;
Alavi, A ;
Finnis, MW .
FARADAY DISCUSSIONS, 1999, 114 :33-43
[9]   Equilibrium and adhesion of Nb/sapphire: The effect of oxygen partial pressure [J].
Batyrev, IG ;
Alavi, A ;
Finnis, MW .
PHYSICAL REVIEW B, 2000, 62 (07) :4698-4706
[10]   In-plane relaxation of Cu(111) and Al(111)/α-Al2O3 (0001) interfaces -: art. no. 033410 [J].
Batyrev, IG ;
Kleinman, L .
PHYSICAL REVIEW B, 2001, 64 (03)