Effect of Annealing on the Characteristics of Pd/Au Contacts to p-Type GaN/Al0.45Ga0.55N

被引：4

作者：

Bai, Y. ^{[1
]}

Liu, J. ^{[1
]}

Shen, H. J. ^{[1
]}

Ma, P. ^{[1
]}

Liu, X. Y. ^{[1
]}

Guo, L. W. ^{[2
]}

机构：

[1] Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2012年 / 41卷 / 11期

基金：

中国国家自然科学基金;

关键词：

High-Al-content AlGaN; ohmic contacts; annealing; GXRD; OHMIC CONTACTS; ALGAN; GAN;

D O I：

10.1007/s11664-012-2183-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of annealing on the characteristics of Pd/Au contacts to p-type GaN/Al0.45Ga0.55N was investigated. The electrical characteristics of Pd/Au contacts and a p-GaN/AlGaN sample were measured after annealing at different temperatures from 550A degrees C to 850A degrees C. Changes in the surface electrical characteristic of p-GaN/AlGaN material were observed after each annealing step. It is indicated that the surface electrical characteristic of p-GaN/AlGaN material plays an important role in the current transport through Pd/Au pads. A possible reason for those changes is impurity contamination, most likely oxygen and carbon contamination introduced from processing. The microstructure of Pd on p-GaN/AlGaN was investigated by glancing-incidence x-ray diffraction (GXRD). The results of GXRD show that the AlPd2 and GaPd2 phases were formed at the interface after annealing, and the formation of these phases could be effective for forming ohmic contacts on p-GaN/AlGaN.

引用

页码：3021 / 3026

页数：6

共 13 条

[1] High-speed characterization of solar-blind AlxGa1-xN p-i-n photodiodes [J].