Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy

被引：30
|
作者：
Ebert, Ph. [1 ]
Ivanova, L. [2 ]
Borisova, S. [1 ]
Eisele, H. [2 ]
Laubsch, A. [3 ]
Daehne, M. [2 ]
机构：
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[3] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 06期
关键词：
dislocation dipoles; energy gap; gallium compounds; III-V semiconductors; scanning tunnelling microscopy; stacking faults; wide band gap semiconductors; VAPOR-PHASE EPITAXY; THREADING DISLOCATIONS; CHARGES; FILMS; EDGE;
D O I：
10.1063/1.3073741
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the type, spatial distribution, line direction, and electronic properties of dislocations in n-type GaN by scanning tunneling microscopy. We found uncharged perfect dislocations with a/3{1120} Burgers vectors and negatively charged Shockley partial dislocations with a/3{1100} Burgers vectors interconnected by a negatively charged stacking fault. The charges are traced to different charge transfer levels associated with the particular core structure.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Charge transport and trapping in InN nanowires investigated by scanning probe microscopy
    Liu, Jie
    Cai, Zhihua
    Koley, Goutam
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)
  • [22] Scanning Tunneling Microscopy Characterization of the Electrical Properties of Wrinkles in Exfoliated Graphene Monolayers
    Xu, Ke
    Cao, Peigen
    Heath, James R.
    NANO LETTERS, 2009, 9 (12) : 4446 - 4451
  • [23] Structure and properties of chemically prepared nanographene islands characterized by scanning tunneling microscopy
    Yamamoto, Mayu
    Obata, Seiji
    Saiki, Koichiro
    SURFACE AND INTERFACE ANALYSIS, 2010, 42 (10-11) : 1637 - 1641
  • [24] Atomic Force Microscopy and Scanning Tunneling Microscopy of Aluminum Nanoislands
    Nedilko, S.
    Prorok, V
    Rozouvan, S.
    NANO HYBRIDS AND COMPOSITES, 2012, 2 : 13 - 24
  • [25] Atomic Force Microscopy and Scanning Tunneling Microscopy of Aluminum Nanoislands
    Nedilko, S.
    Prorok, V.
    Rozouvan, S.
    NANO HYBRIDS, 2012, 2 : 13 - 24
  • [26] Topographic and electronic contrast of the graphene moire on Ir(111) probed by scanning tunneling microscopy and noncontact atomic force microscopy
    Sun, Zhixiang
    Hamalainen, Sampsa K.
    Sainio, Jani
    Lahtinen, Jouko
    Vanmaekelbergh, Daniel
    Liljeroth, Peter
    PHYSICAL REVIEW B, 2011, 83 (08)
  • [27] Scanning tunneling microscopy of titanium silicide nanoislands
    Goldfarb, I
    Grossman, S
    Cohen-Taguri, G
    Levinshtein, M
    APPLIED SURFACE SCIENCE, 2004, 238 (1-4) : 29 - 35
  • [28] Stacking faults imaged by scanning tunneling microscopy
    Bo, XZ
    Fang, HS
    MATERIALS LETTERS, 1998, 37 (1-2) : 98 - 101
  • [29] Growth and electronic properties of GaN/ZnO solid solution nanowires
    Han, Wei-Qiang
    Zhang, Yan
    Nam, Chang-Yong
    Black, C. T.
    Mendez, E. E.
    APPLIED PHYSICS LETTERS, 2010, 97 (08)
  • [30] Observation of electron tunneling induced photon emission in gallium (Ga) doped (1%) zinc oxide (ZnO) sample using scanning tunneling microscopy
    Dey, Shirshendu
    Shinde, S. D.
    Adhi, K. P.
    Dharmadhikari, C. V.
    APPLIED PHYSICS LETTERS, 2009, 95 (06)
12345