Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy

被引：30

作者：

Ebert, Ph. ^{[1
]}

Ivanova, L. ^{[2
]}

Borisova, S. ^{[1
]}

Eisele, H. ^{[2
]}

Laubsch, A. ^{[3
]}

Daehne, M. ^{[2
]}

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[3] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 06期

关键词：

dislocation dipoles; energy gap; gallium compounds; III-V semiconductors; scanning tunnelling microscopy; stacking faults; wide band gap semiconductors; VAPOR-PHASE EPITAXY; THREADING DISLOCATIONS; CHARGES; FILMS; EDGE;

D O I：

10.1063/1.3073741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the type, spatial distribution, line direction, and electronic properties of dislocations in n-type GaN by scanning tunneling microscopy. We found uncharged perfect dislocations with a/3{1120} Burgers vectors and negatively charged Shockley partial dislocations with a/3{1100} Burgers vectors interconnected by a negatively charged stacking fault. The charges are traced to different charge transfer levels associated with the particular core structure.

引用

页数：3

共 28 条

[1] Nonradiative recombination at threading dislocations in n-type GaN:: Studied by cathodoluminescence and defect selective etching [J].

Albrecht, M. ;

Weyher, J. L. ;

Lucznik, B. ;

Grzegory, I. ;

Porowski, S. .

APPLIED PHYSICS LETTERS, 2008, 92 (23)

[2]

AMELINCKX S, 1979, DISLOCATIONS SOLIDS, V2, P302

[3] Atomic and electronic structure of mixed and partial dislocations in GaN [J].

Arslan, I ;

Bleloch, A ;

Stach, EA ;

Browning, ND .

PHYSICAL REVIEW LETTERS, 2005, 94 (02)

[4] Dislocations in hexagonal and cubic GaN [J].

Blumenau, AT ;

Elsner, J ;

Jones, R ;

Heggie, MI ;

Öberg, S ;

Frauenheim, T ;

Briddon, PR .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (49) :10223-10233

[5]

Cai J, 2002, PHYS STATUS SOLIDI A, V192, P407, DOI 10.1002/1521-396X(200208)192:2<407::AID-PSSA407>3.0.CO

[6]

2-M

[7] Electron holography studies of the charge on dislocations in GaN [J].

Cherns, D ;

Jiao, CG .

PHYSICAL REVIEW LETTERS, 2001, 87 (20) :205504-1

[8] Oscillating contrast in room-temperature scanning tunneling microscope images of localized charges in III-V semiconductor cleavage surfaces [J].

Domke, C ;

Heinrich, M ;

Ebert, P ;

Urban, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (05) :2825-2832

[9] Nano-scale properties of defects in compound semiconductor surfaces [J].

Ebert, P .

SURFACE SCIENCE REPORTS, 1999, 33 (4-8) :121-303

[10] Direct observation of electrical charges at dislocations in GaAs by cross-sectional scanning tunneling microscopy [J].

Ebert, P ;

Domke, C ;

Urban, K .

APPLIED PHYSICS LETTERS, 2001, 78 (04) :480-482

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