Temperature-independent spin relaxation in heavily doped n-type germanium

被引：31

作者：

Fujita, Y. ^{[1
]}

Yamada, M. ^{[1
]}

Yamada, S. ^{[1
,2
]}

Kanashima, T. ^{[1
,2
]}

Sawano, K. ^{[3
]}

Hamaya, K. ^{[1
,2
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Syst Innovat, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Ctr Spintron Res Network, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan

[3] Tokyo City Univ, Adv Res Labs, 8-15-1 Todoroki, Tokyo 1580082, Japan

来源：

PHYSICAL REVIEW B | 2016年 / 94卷 / 24期

基金：

日本学术振兴会;

关键词：

RESONANCE EXPERIMENTS; ELECTRICAL DETECTION; SHALLOW DONORS; GE; SEMICONDUCTORS; TRANSPORT; ELECTRONS; INSB; SI;

D O I：

10.1103/PhysRevB.94.245302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We experimentally study the spin relaxation mechanism in heavily doped n-type germanium (Ge) layers by electrically detecting pure spin current transport. The spin diffusion length (lambda(Ge)) in heavily doped n-type Ge layers at 125 K is less than 0.7 mu m, much shorter than that expected in the recent study by Dushenko et al. We find that the spin relaxation time tau(s) is independent of temperature in the range of 8 to 125 K, which can be interpreted by the recent theory by Song et al. This study clarifies that the spin-relaxation mechanism at low temperatures in degenerate Ge is dominated by extrinsic scattering with impurities.

引用

页数：5

共 45 条

[1] Electronic measurement and control of spin transport in silicon [J].