Spin injection studies into GaAs quantum wells in the presence of confined electrons

被引：6
作者：
Yasar, M. [1 ]
Mallory, R. [1 ]
Petrou, A. [1 ]
Hanbicki, A. T. [2 ]
Kioseoglou, G. [2 ,3 ]
Li, C. H. [2 ]
van't Erve, O. M. J. [2 ]
Jonker, B. T. [2 ]
机构：
[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
[2] USN, Res Lab, Washington, DC 20375 USA
[3] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Greece
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 03期
关键词：
aluminium compounds; electroluminescence; gallium arsenide; III-V semiconductors; iron; light emitting diodes; phonon-exciton interactions; polarisation; semiconductor doping; semiconductor quantum wells; spin polarised transport; RECOMBINATION; RELAXATION;
D O I：
10.1063/1.3073752
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We compare the electroluminescence spectra (spectral composition and polarization characteristics) of two types of Fe-based AlGaAs/GaAs n-i-p spin light emitting diodes (spin LEDs). In type A spin LEDs the GaAs quantum well (QW) does not contain any confined carriers, while in type B LEDs the GaAs QW is occupied by confined electrons generated by excess n-type doping in the AlGaAs(n) barrier. Type B LEDs show a significantly smaller circular polarization at the e(1)h(1) feature than type A devices. Other differences include the presence of the e(1)...(1) exciton as well as excitonic phonon replicas in type B LEDs. Possible mechanisms for these differences are discussed.
引用
收藏
页数：3
相关论文
共 50 条
[41]   Enhancing spin diffusion in GaAs quantum wells: The role of electron density and channel width [J].
Grobecker, B. W. ;
Poshakinskiy, A. V. ;
Anghel, S. ;
Mano, T. ;
Yusa, G. ;
Betz, M. .
JOURNAL OF APPLIED PHYSICS, 2025, 137 (18)
[42]   Carrier spin dynamics in GaAs/AlGaAs quantum wells with a laterally localizing electric potential [J].
Cherbunin, R. V. ;
Kuznetsova, M. S. ;
Gerlovin, I. Ya. ;
Ignatiev, I. V. ;
Dolgikh, Yu. K. ;
Efimov, Yu. P. ;
Eliseev, S. A. ;
Petrov, V. V. ;
Poltavtsev, S. V. ;
Larionov, A. V. ;
Il'in, A. I. .
PHYSICS OF THE SOLID STATE, 2009, 51 (04) :837-840
[43]   Electron density effect on spin-orbit interaction in [001] GaAs quantum wells [J].
Alekseev, P. S. ;
Nestoklon, M. O. .
PHYSICAL REVIEW B, 2021, 103 (19)
[44]   Spin resonance of electrons confined by SiGe nanostructures [J].
Lipps, F. ;
Pezzoli, F. ;
Stoffel, M. ;
Rastelli, A. ;
Kataev, V. ;
Schmidt, O. G. ;
Buechner, B. .
INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009), 2010, 200
[45]   Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure [J].
Luo, Haihui ;
Qian, Xuan ;
Gu, Xiaofang ;
Ji, Yang ;
Umansky, Vladimir .
APPLIED PHYSICS LETTERS, 2009, 94 (19)
[46]   Interfacial fluctuations effects on confined excitons in single GaAs/AlxGa1-xAs quantum wells [J].
Ferreira, EC ;
Freire, JAK ;
Freire, VN ;
da Costa, JAP ;
Albuquerque, EL ;
Mauriz, PW ;
Farias, GA .
SURFACE SCIENCE, 2003, 532 :774-779
[47]   Softening of the tunneling gap in modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells in magnetic fields [J].
Shin, Y. H. ;
Park, Y. H. ;
Perry, C. H. ;
Simmons, J. A. ;
Takamasu, T. ;
Kim, Yongmin .
APPLIED PHYSICS LETTERS, 2009, 95 (08)
[48]   Spin dephasing of electrons and holes in isotopically purified ZnSe/(Zn,Mg)Se quantum wells [J].
Kopteva, N. E. ;
Kirstein, E. ;
Zhukov, E. A. ;
Hussain, M. ;
Bhatti, A. S. ;
Pawlis, A. ;
Yakovlev, D. R. ;
Bayer, M. ;
Greilich, A. .
PHYSICAL REVIEW B, 2019, 100 (20)
[49]   Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells [J].
Sasayama, K. ;
Nakanishi, S. ;
Yamaguchi, R. ;
Oyanagi, Y. ;
Ushimi, T. ;
Gozu, S. ;
Mozume, T. ;
Tackeuchi, A. .
APPLIED PHYSICS LETTERS, 2012, 100 (09)
[50]   Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells [J].
Singh, S. D. ;
Dixit, V. K. ;
Porwal, S. ;
Kumar, Ravi ;
Srivastava, A. K. ;
Ganguli, Tapas ;
Sharma, T. K. ;
Oak, S. M. .
APPLIED PHYSICS LETTERS, 2010, 97 (11)
12345