Spin injection studies into GaAs quantum wells in the presence of confined electrons

被引：6
作者：
Yasar, M. [1 ]
Mallory, R. [1 ]
Petrou, A. [1 ]
Hanbicki, A. T. [2 ]
Kioseoglou, G. [2 ,3 ]
Li, C. H. [2 ]
van't Erve, O. M. J. [2 ]
Jonker, B. T. [2 ]
机构：
[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
[2] USN, Res Lab, Washington, DC 20375 USA
[3] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Greece
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 03期
关键词：
aluminium compounds; electroluminescence; gallium arsenide; III-V semiconductors; iron; light emitting diodes; phonon-exciton interactions; polarisation; semiconductor doping; semiconductor quantum wells; spin polarised transport; RECOMBINATION; RELAXATION;
D O I：
10.1063/1.3073752
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We compare the electroluminescence spectra (spectral composition and polarization characteristics) of two types of Fe-based AlGaAs/GaAs n-i-p spin light emitting diodes (spin LEDs). In type A spin LEDs the GaAs quantum well (QW) does not contain any confined carriers, while in type B LEDs the GaAs QW is occupied by confined electrons generated by excess n-type doping in the AlGaAs(n) barrier. Type B LEDs show a significantly smaller circular polarization at the e(1)h(1) feature than type A devices. Other differences include the presence of the e(1)...(1) exciton as well as excitonic phonon replicas in type B LEDs. Possible mechanisms for these differences are discussed.
引用
收藏
页数：3
相关论文
共 50 条
[21]   Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings [J].
Yu, Hua-Liang ;
Zhang, Xiu-Min ;
Wang, Peng-Fei ;
Ni, Hai-Qiao ;
Niu, Zhi-Chuan ;
Lai, Tianshu .
APPLIED PHYSICS LETTERS, 2009, 94 (20)
[22]   Intersubband exchange interaction induced by optically excited electron spins in GaAs/AlGaAs quantum wells [J].
Morita, K. ;
Sanada, H. ;
Matsuzaka, S. ;
Ohno, Y. ;
Ohno, H. .
APPLIED PHYSICS LETTERS, 2009, 94 (16)
[23]   Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy [J].
Kunets, Vas. P. ;
Morgan, T. Al. ;
Mazur, Yu. I. ;
Dorogan, V. G. ;
Lytvyn, P. M. ;
Ware, M. E. ;
Guzun, D. ;
Shultz, J. L. ;
Salamo, G. J. .
JOURNAL OF APPLIED PHYSICS, 2008, 104 (10)
[24]   Slow and fast light in photorefractive GaAs-AlGaAs multiple quantum wells in transverse geometry [J].
Bo, Fang ;
Liu, Ze ;
Gao, Feng ;
Zhang, Guoquan ;
Xu, Jingjun .
JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)
[25]   Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells [J].
Jiang, J. H. ;
Zhou, Y. ;
Korn, T. ;
Schueller, C. ;
Wu, M. W. .
PHYSICAL REVIEW B, 2009, 79 (15)
[26]   Growth direction dependence of the electron spin dynamics in {111} GaAs quantum wells [J].
Ye, H. Q. ;
Wang, G. ;
Liu, B. L. ;
Shi, Z. W. ;
Wang, W. X. ;
Fontaine, C. ;
Balocchi, A. ;
Amand, T. ;
Lagarde, D. ;
Renucci, P. ;
Marie, X. .
APPLIED PHYSICS LETTERS, 2012, 101 (03)
[27]   Magnetic field effect on electron spin dynamics in (110) GaAs quantum wells [J].
Wang, G. ;
Balocchi, A. ;
Poshakinskiy, A. V. ;
Zhu, C. R. ;
Tarasenko, S. A. ;
Amand, T. ;
Liu, B. L. ;
Marie, X. .
NEW JOURNAL OF PHYSICS, 2014, 16
[28]   Nanosecond Spin Coherence Time of Nonradiative Excitons in GaAs/AlGaAs Quantum Wells [J].
Trifonov, A., V ;
Khramtsov, E. S. ;
Kavokin, K., V ;
Ignatiev, I., V ;
Kavokin, A., V ;
Efimov, Y. P. ;
Eliseev, S. A. ;
Shapochkin, P. Yu ;
Bayer, M. .
PHYSICAL REVIEW LETTERS, 2019, 122 (14)
[29]   Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells [J].
English, D. J. ;
Huebner, J. ;
Eldridge, P. S. ;
Taylor, D. ;
Henini, M. ;
Harley, R. T. ;
Oestreich, M. .
PHYSICAL REVIEW B, 2013, 87 (07)
[30]   Spin-polarization dynamics in InGaAs quantum dots during pulsed electrical spin-injection [J].
Asshoff, Pablo ;
Loeffler, Wolfgang ;
Zimmer, Jochen ;
Fueser, Heiko ;
Fluegge, Harald ;
Kalt, Heinz ;
Hetterich, Michael .
APPLIED PHYSICS LETTERS, 2009, 95 (20)
12345