Spin injection studies into GaAs quantum wells in the presence of confined electrons

被引：6

作者：

Yasar, M. ^{[1
]}

Mallory, R. ^{[1
]}

Petrou, A. ^{[1
]}

Hanbicki, A. T. ^{[2
]}

Kioseoglou, G. ^{[2
,3
]}

Li, C. H. ^{[2
]}

van't Erve, O. M. J. ^{[2
]}

Jonker, B. T. ^{[2
]}

机构：

[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Greece

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 03期

关键词：

aluminium compounds; electroluminescence; gallium arsenide; III-V semiconductors; iron; light emitting diodes; phonon-exciton interactions; polarisation; semiconductor doping; semiconductor quantum wells; spin polarised transport; RECOMBINATION; RELAXATION;

D O I：

10.1063/1.3073752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the electroluminescence spectra (spectral composition and polarization characteristics) of two types of Fe-based AlGaAs/GaAs n-i-p spin light emitting diodes (spin LEDs). In type A spin LEDs the GaAs quantum well (QW) does not contain any confined carriers, while in type B LEDs the GaAs QW is occupied by confined electrons generated by excess n-type doping in the AlGaAs(n) barrier. Type B LEDs show a significantly smaller circular polarization at the e(1)h(1) feature than type A devices. Other differences include the presence of the e(1)...(1) exciton as well as excitonic phonon replicas in type B LEDs. Possible mechanisms for these differences are discussed.

引用

页数：3

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