Spin injection studies into GaAs quantum wells in the presence of confined electrons

被引：6
|
作者：
Yasar, M. [1 ]
Mallory, R. [1 ]
Petrou, A. [1 ]
Hanbicki, A. T. [2 ]
Kioseoglou, G. [2 ,3 ]
Li, C. H. [2 ]
van't Erve, O. M. J. [2 ]
Jonker, B. T. [2 ]
机构：
[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
[2] USN, Res Lab, Washington, DC 20375 USA
[3] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Greece
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 03期
关键词：
aluminium compounds; electroluminescence; gallium arsenide; III-V semiconductors; iron; light emitting diodes; phonon-exciton interactions; polarisation; semiconductor doping; semiconductor quantum wells; spin polarised transport; RECOMBINATION; RELAXATION;
D O I：
10.1063/1.3073752
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We compare the electroluminescence spectra (spectral composition and polarization characteristics) of two types of Fe-based AlGaAs/GaAs n-i-p spin light emitting diodes (spin LEDs). In type A spin LEDs the GaAs quantum well (QW) does not contain any confined carriers, while in type B LEDs the GaAs QW is occupied by confined electrons generated by excess n-type doping in the AlGaAs(n) barrier. Type B LEDs show a significantly smaller circular polarization at the e(1)h(1) feature than type A devices. Other differences include the presence of the e(1)...(1) exciton as well as excitonic phonon replicas in type B LEDs. Possible mechanisms for these differences are discussed.
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页数：3
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