Non-linear direct-laser-write lithography for semiconductor nanowire characterisation

被引：0
|
作者：
Parkinson, P. [1 ]
Peng, K. [1 ]
Jiang, N. [1 ]
Gao, Q. [1 ]
Tan, H. H. [1 ]
Jagadish, C. [1 ]
机构：
[1] Australian Natl Univ, Res Sch Phys & Engn, Canberra, ACT 0200, Australia
来源：
2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A non-linear photolithography technique is presented, providing a new, rapid and damage-free method of contacting semiconductor nanowires. In addition, by using nanowires with room-temperature luminescence, a through-resist photoluminescence step provides a verifiable route to contacting high-quality wires [1].
引用
收藏
页码：135 / 136
页数：2
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