Preparation of indium tin oxide thin films without external heating for application in solar cells

被引：16

作者：

Chu, J. B. ^{[1
]}

Huang, S. M. ^{[1
]}

Zhu, H. B. ^{[1
]}

Xu, X. B. ^{[1
]}

Sun, Z. ^{[1
]}

Chen, Y. W. ^{[1
]}

Huang, F. Q. ^{[2
]}

机构：

[1] E China Normal Univ, Engn Res Ctr Nanophoton & Adv Inst, Minist Educ, Shanghai 200062, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 52-54期

基金：

中国国家自然科学基金;

关键词：

Photovoltaics; Sputtering; Indium tin oxide and other transparent conductors;

D O I：

10.1016/j.jnoncrysol.2008.08.011

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Indium tin oxide (ITO) films were grown without external heating in an ambient of pure argon by RF-magnetron sputtering method. The influence of argon ambient pressure on the electro-optical properties of as-deposited ITO films was investigated. The morphology. structural and optical properties of ITO films were examined and characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and UV-VIS transmission spectroscopy. The deposited ITO films with a thickness of 300 nm show a high transparency between 80% and 90% in the visible spectrum and 14-120 Omega/square sheet resistance under different conditions, The ITO films deposited in the optimum argon ambient pressure were used as transparent electrical contacts for thin film Cu(In,Ga)Se-2 (CIGS) solar cells. CIGS solar cells with efficiencies of the order of 7.0% were produced without antireflective films. The results have demonstrated that the developed ITO deposition technology has potential applications in thin film solar cells. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：5480 / 5484

页数：5

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