Plasma etch removal of poly(methyl methacrylate) in block copolymer lithography

被引：84

作者：

Ting, Yuk-Hong ^{[1
]}

Park, Sang-Min ^{[2
]}

Liu, Chi-Chun ^{[2
]}

Liu, Xiaosong ^{[3
]}

Himpsel, F. J. ^{[3
]}

Nealey, Paul F. ^{[2
]}

Wendt, Amy E. ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

[2] Univ Wisconsin, Dept Chem & Biol Engn, Madison, WI 53706 USA

[3] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 05期

关键词：

D O I：

10.1116/1.2966433

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polystyrene-block-poly(methyl methacrylate), (PS-b-PMMA) diblock copolymer is a promising lithography alternative for nanometer scale features. The two components segregate into nanoscale domains when the polymer solution is spun on to form a thin film and annealed above the glass transition temperatures of both components. Preferential removal of PMMA domains through plasma etching to leave behind a PS mask for subsequent etching of underlying layers is the focus of this work. The quality of the PS mask is characterized by the thickness and lateral dimension of the PS structures after removal of the PMMA, as well as the smoothness of their surfaces. The effects of different plasma chemistries including O-2, Ar/O-2, Ar, CF4, and CHF3/O-2 on etch selectivity and surface/sidewall roughness for PS and PMMA have been characterized. Ar/O-2 produced the overall best results for the range of conditions studied. (C) 2008 American Vacuum Society.

引用

页码：1684 / 1689

页数：6

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