HfO2 nanocrystal memory on SiGe channel

被引：5
作者：
Lin, Yu-Hsien [1 ]
Chien, Chao-Hsin [2 ,3 ]
机构：
[1] Natl United Univ, Dept Elect Engn, Miaoli 36003, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2013年 / 80卷
关键词：
Hafnium oxide; Nanocrystals; Nonvolatile memories; Flash memory; SiGe channel; FLASH; OXIDE; PERFORMANCE;
D O I：
10.1016/j.sse.2012.10.009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study proposes a novel HfO2 nanocrystal memory on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it increases electron/hole injection and the enhances program/erase speeds. This study compares the characteristics of HfO2 nanocrystal memories with different oxynitride tunnel oxide thicknesses on Si and epi-SiGe substrate. Results show that the proposed nonvolatile memory possesses superior characteristics in terms of considerably large memory window for two-bits operation, high speed program/erase for low power applications, long retention time, excellent endurance, and strong immunity to disturbance. (C) 2012 Elsevier Ltd. All rights reserved.
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收藏
页码：5 / 9
页数：5
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