Effect of uncertainty principle on the Wigner function-based simulation of quantum transport

被引:12
作者
Kim, Kyoung-Youm [1 ]
Kim, Saehwa [2 ]
机构
[1] Sejong Univ, Dept Elect Engn, Seoul 143747, South Korea
[2] Hankuk Univ Foreign Studies, Dept Informat & Commun Engn, Gyeonggi Do 449791, South Korea
关键词
Wigner function; Uncertainty principle; Quantum transport; Numerical analysis; VARYING EFFECTIVE-MASS; EQUATION; SEMICONDUCTORS; FORMULATION; SCHEMES; DEVICES;
D O I
10.1016/j.sse.2015.04.007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigate the effect of uncertainty principle on the simulation of quantum transport based on the Wigner function. We show that due to the positional uncertainty of electrons within the device, which bounds the region for nonlocal potential correlation, a constraint is imposed via the uncertainty principle on the possible momentum resolution of the Wigner function. It is numerically demonstrated that its violation deteriorates the simulation results significantly in configurations where the quantum effects are crucial. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:22 / 26
页数:5
相关论文
共 49 条
  • [41] Two-dimensional quantum mechanical simulation of electron transport in nano-scaled Si-based MOSFETs
    Chen, WQ
    Register, LF
    Banerjee, SK
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2) : 28 - 32
  • [42] 3D quantum transport solver based on the perfectly matched layer and spectral element methods for the simulation of semiconductor nanodevices
    Cheng, Candong
    Lee, Joon-Ho
    Lim, Kim Hwa
    Massoud, Hisham Z.
    Liu, Qing Huo
    [J]. JOURNAL OF COMPUTATIONAL PHYSICS, 2007, 227 (01) : 455 - 471
  • [43] Quantum Transport Simulation of Bilayer pseudoSpin Field-Effect Transistor (BiSFET) with Tight-Binding Hartree-Fock Model
    Mou, Xuehao
    Register, Leonard F.
    Banerjee, Sanjay K.
    [J]. 2013 18TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2013), 2013, : 420 - 423
  • [44] Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: An Ab Initio Quantum Transport Simulation
    Liu, Shiqi
    Li, Qiuhui
    Yang, Chen
    Yang, Jie
    Xu, Lin
    Xu, Linqiang
    Ma, Jiachen
    Li, Ying
    Fang, Shibo
    Wu, Baochun
    Dong, Jichao
    Yang, Jinbo
    Lu, Jing
    [J]. PHYSICAL REVIEW APPLIED, 2022, 18 (05)
  • [45] Highly efficient spin field-effect transistor based on nanographene and hBN heterostructures: spintronic and quantum transport properties
    Abdelsalam, Hazem
    Sakr, Mahmoud A. S.
    Teleb, Nahed H.
    Abd Elkader, Omar H.
    Zhilong, Wang
    Liu, Yushen
    Zhang, Qinfang
    [J]. CHINESE JOURNAL OF PHYSICS, 2024, 90 : 237 - 251
  • [46] Aharonov-Casher effect and quantum transport in graphene based nano rings: A self-consistent Born approximation
    Ghaderzadeh, A.
    Rahbari, S. H. Ebrahimnazhad
    Phirouznia, A.
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2018, 449 : 485 - 492
  • [47] Quantum electron transport modeling in double-gate MOSFETs based on multiband non-equilibrium Green's function method
    Fitriawan, Helmy
    Ogawa, Matsuto
    Souma, Satofumi
    Miyoshi, Tanroku
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 40 (02) : 245 - 248
  • [48] Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors
    Liu, Yizhang
    Li, Erping
    Duan, Huali
    Tian, Liang
    Li, Da
    Chen, Wenchao
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (10) : 5807 - 5814
  • [49] Simulation of quantum transport in double-gate MOSFETs using the non-equilibrium Green's function formalism in real-space: A comparison of four methods
    Sabry, Yasser M.
    Abdolkader, Tarek M.
    Farouk, Wael F.
    [J]. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2011, 24 (04) : 322 - 334