Correlated annealing and formation of vacancy-hydrogen related complexes in silicon

被引：0

作者：

Kolevatov, I. L. ^{[1
]}

Svensson, B. G. ^{[1
]}

Monakhov, E., V ^{[1
]}

机构：

[1] Univ Oslo, Dept Phys, Ctr Mat Sci & Nanotechnol, POB 1048, Oslo, Norway

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2019年 / 31卷 / 23期

关键词：

silicon; hydrogen; vacancy-defects; DLTS; CRYSTALLINE SILICON; DEFECTS;

D O I：

10.1088/1361-648X/ab0bf2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on a deep level transient spectroscopy study of annealing kinetics of a deep, vacancy-hydrogen related level, labeled E5*, at 0.42 eV below the conduction band in hydrogen-implanted n-type silicon. The E5* annealing correlates with the formation of another commonly observed vacancy-hydrogen related level, labeled E5, at 0.45 eV below the conduction band. The annealing of E5* and the formation of E5 exhibit first-order kinetics with an activation energy of 1.61 +/- 0.07 eV and a pre-factor of similar to 10(13)-10(14) s(-1). The pre-factor indicates a dissociation or structural transformation mechanism. The analysis of electron capture cross-sections for E5* and E5 reveals considerable transition entropies for both states and a temperature dependent capture cross-section for E5*. Two possible identifications of E5* and E5 are put forward. Firstly, E5* can be attributed to V2H2(-/0) or V2H3(-/0), which dissociate with the emission of VH (E5). Secondly, E5* and E5 can be assigned to two different configurations of V3H.

引用

页数：5

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