Feasibility study for double-sided silicon microstrip detector fabrication at IRST

被引：8
|
作者：
Dalla Betta, GF [1 ]
Boscardin, M
Bosisio, L
Carmel-Barnea, N
Ferrario, L
Pignatel, GU
Rachevskaia, I
Zen, M
Zorzi, N
机构：
[1] IRST, Div Microsensori & Integraz Sistemi, I-38050 Trento, Italy
[2] Dipartimento Fis, I-34127 Trieste, Italy
[3] Ist Nazl Fis Nucl, Sez Trieste, I-34127 Trieste, Italy
[4] Univ Trent, Dipartimento Ingn Mat, I-38050 Mesiano, TN, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 431卷 / 1-2期
关键词：
silicon microstrip detectors; fabrication technology; electrical characterization;
D O I：
10.1016/S0168-9002(99)00243-0
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
This paper is concerned with the preliminary results of a technological study aimed at the development of a fabrication process for double-sided AC-coupled silicon microstrip detectors. The approach adopted for the fabrication of both single-sided and double-sided detectors is presented, and the results from electrical tests performed on detectors and test structures are reported and discussed. Good electrical characteristics as well as an acceptable number of process-related defects have been obtained for these prototype detectors, thus demonstrating the feasibility of fabricating such devices at the IRST facility. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：83 / 91
页数：9
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