Low-frequency four-photon spectroscopy of surface waves in semiconductors: A new mechanism of optical nonlinearity

被引：2

作者：

Bunkin, A. F. ^{[1
]}

Davydov, M. A. ^{[1
]}

Mikhalevich, V. G. ^{[1
]}

Pershin, S. M. ^{[1
]}

Streltsov, V. N. ^{[1
]}

机构：

[1] Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia

来源：

PHYSICS OF WAVE PHENOMENA | 2015年 / 23卷 / 03期

关键词：

Wave Phenomenon; Signal Laser; Intrinsic Semiconductor; Semiconductor Plate; Pump Laser Frequency;

D O I：

10.3103/S1541308X15030024

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new mechanism of optical nonlinearity of intrinsic semiconductors is proposed, which is based on bandgap modulation due to the four-wave mixing of interacting waves on the semiconductor surface. This phenomenon is theoretically considered within a one-dimensional model. The corresponding resonances are experimentally found in Ge and Si samples.

引用

页码：176 / 179

页数：4

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