A novel wavelength-adjusting method in InGaN-based light-emitting diodes

被引：61

作者：

Deng, Zhen ^{[1
]}

Jiang, Yang ^{[1
]}

Ma, Ziguang ^{[1
]}

Wang, Wenxin ^{[1
]}

Jia, Haiqiang ^{[2
]}

Zhou, Junming ^{[2
]}

Chen, Hong ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Key Lab Renewable Energy, Beijing 100190, Peoples R China

[2] Beijing Key Lab New Energy Mat & Devices, Beijing 100190, Peoples R China

来源：

SCIENTIFIC REPORTS | 2013年 / 3卷

基金：

国家高技术研究发展计划(863计划);

关键词：

MULTIPLE-QUANTUM WELLS; SPONTANEOUS POLARIZATION; ORIENTATION DEPENDENCE; PIEZOELECTRIC FIELDS; BLUE; SEMICONDUCTORS; SEGREGATION; BRIGHTNESS;

D O I：

10.1038/srep03389

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The pursuit of high internal quantum efficiency (IQE) for green emission spectral regime is referred as "green gap" challenge. Now researchers place their hope on the InGaN-based materials to develop high-brightness green light-emitting diodes. However, IQE drops fast when emission wavelength of InGaN LED increases by changing growth temperature or well thickness. In this paper, a new wavelength-adjusting method is proposed and the optical properties of LED are investigated. By additional process of indium pre-deposition before InGaN well layer growth, the indium distribution along growth direction becomes more uniform, which leads to the increase of average indium content in InGaN well layer and results in a redshift of peak-wavelength. We also find that the IQE of LED with indium pre-deposition increases with the wavelength redshift. Such dependence is opposite to the IQE-wavelength behavior in conventional InGaN LEDs. The relations among the IQE, wavelength and the indium pre-deposition process are discussed.

引用

页数：4

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