Integrated 1550 nm photoreceiver with built-in amplification and feedback mechanisms

被引:9
作者
Rahman, Samia Nawar [1 ]
Hall, David [1 ]
Mei, Zhe [1 ]
Lo, Yu-Hwa [1 ]
机构
[1] Univ Calif San Diego, La Jolla, CA 92093 USA
关键词
AVALANCHE PHOTODIODES;
D O I
10.1364/OL.38.004166
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Sensitivity, dynamic range and detection efficiency are among the key figures of merit for 1550 nm wavelength detectors that find applications in communications, sensing, and imaging. Some fundamental material and device limits have added tremendous difficulties for a single device to achieve high sensitivity and dynamic range without significant trade-offs. We present a concept that can potentially overcome this performance bottleneck. Preliminary results have shown a sensitivity of 10 photons (six photons from the quantum limit) and a large dynamic range (in the sense that output increases monotonically with input). The concept opens up a new avenue for detecting single photons in non-Geiger-mode with near 100% detection efficiency. (C) 2013 Optical Society of America
引用
收藏
页码:4166 / 4169
页数:4
相关论文
共 21 条
[1]  
Agrawal G. P., 2010, FIBER OPTIC COMMUNIC
[2]   AVALANCHE INP/INGAAS HETEROJUNCTION PHOTO-TRANSISTOR [J].
CAMPBELL, JC ;
DENTAI, AG ;
QUA, GJ ;
FERGUSON, JF .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :1134-1138
[3]  
Chazalviel J. N., 1999, COULOMB SCREENING MO
[4]   Self-quenching InGaAs/InP single photon avalanche detector utilizing zinc diffusion rings [J].
Cheng, James ;
You, Sifang ;
Rahman, Samia ;
Lo, Yu-Hwa .
OPTICS EXPRESS, 2011, 19 (16) :15149-15154
[5]   GAAS/INGAAS/ALGAAS OPTOELECTRONIC SWITCH IN AVALANCHE HETEROJUNCTION PHOTOTRANSISTOR VERTICALLY INTEGRATED WITH A RESONANT-CAVITY [J].
HUANG, FY ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1994, 64 (04) :405-407
[6]  
Itzler M. A., 2010, P SPIE, V7681
[7]   Advances in InGaAsP-based avalanche diode single photon detectors [J].
Itzler, Mark A. ;
Jiang, Xudong ;
Entwistle, Mark ;
Slomkowski, Krystyna ;
Tosi, Alberto ;
Acerbi, Fabio ;
Zappa, Franco ;
Cova, Sergio .
JOURNAL OF MODERN OPTICS, 2011, 58 (3-4) :174-200
[8]   Afterpulsing effects in free-running InGaAsP single-photon avalanche diodes [J].
Jiang, Xudong ;
Itzler, Mark A. ;
Ben-Michael, Rafael ;
Slomkowski, Krystyna ;
Krainak, Michael A. ;
Wu, Stewart ;
Sun, Xiaoli .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2008, 44 (1-2) :3-11
[9]   InGaAsP-InP avalanche photodiodes for single photon detection [J].
Jiang, Xudong ;
Itzler, Mark A. ;
Ben-Michael, Rafael ;
Slomkowski, Krystyna .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2007, 13 (04) :895-905
[10]   High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at λ ∼ 1.55 μm [J].
Joo, Jiho ;
Kim, Sanghoon ;
Kim, In Gyoo ;
Jang, Ki-Seok ;
Kim, Gyungock .
OPTICS EXPRESS, 2010, 18 (16) :16474-16479