1.55-μm-waveband emissions from Sb-based quantum-dot vertical-cavity surface-emitting laser structures fabricated on GaAs substrate

We have developed antimonide-based quantum-dot vertical-cavity Surface-emitting laser (Sb-based QD-VCSEL) structures for operation in the 1.3 and 1.55 mu m optical communication wavebands. They were fabricated on a (001)-oriented GaAs Substrate and contain high-density InGaSb QDs as the active medium owing to the use of silicon atom irradiation. Testing demonstrated that they have optical-communication-waveband emission peaks at around 1.55 mu m in cw wave operation at room temperature under conditions of optical pumping and current injection. Additionally, it was found that these Sb-based QD-VCSELs have threshold characteristics in the emission intensities vs both optical-pumping power and current.