An Adapted Tunneling Model for MgO-based Magnetic Tunneling Junctions

被引：0

作者：

Chen, B. J. ^{[1
]}

Tan, S. G. ^{[1
,2
]}

Cai, K. ^{[1
]}

Tan, S. G. ^{[1
,2
]}

机构：

[1] Natl Univ Singapore, Data Storage Inst, DSI Bldg,5 Engn Dr 1, Singapore 117608, Singapore

[2] Natl Univ Singapore, Comp Nanoelect & Nanodevice Lab, Singapore 117576, Singapore

来源：

2012 12TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM | 2012年

关键词：

tunneling model; MgO barrier; magnetic tunneling junctions; ROOM-TEMPERATURE; MAGNETORESISTANCE; CONDUCTANCE;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We present a model for calculating the tunneling conductance and thus the tunneling magnetoresistance for MgO-based magnetic tunneling junctions. Both effects from the interface scattering and the barrier imperfection are considered in the model by introducing additional parameters. The temperature dependence of resistance is included by using a phenomenological model. This model successfully interprets the experimental results in the published literatures.

引用

页码：7 / 11

页数：5

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