Electronic diffusivity measurement in silicon by photothermal microscopy

被引：33

作者：

Forget, BC ^{[1
]}

Barbereau, I ^{[1
]}

Fournier, D ^{[1
]}

Tuli, S ^{[1
]}

Battacharyya, AB ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,CARE,NEW DELHI 110016,INDIA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 08期

关键词：

D O I：

10.1063/1.117073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we demonstrate that a photothermal microscopy experiment can be used to determine the electronic diffusivity (or carrier mobility) in the same way it is now widely used to measure locally thermal diffusivity of various nonsemiconductor materials. The main difficulty lies in the fact that in order to separate thermal and carrier diffusion, the experiment must be performed for a relatively large distance between the pump and probe beams. Photothermal signals are therefore rather weak and great experimental care must be taken. We present and discuss experimental results on Si. (C) 1996 American Institute of Physics.

引用

页码：1107 / 1109

页数：3

共 21 条

[1]

CLAEYS W, 1994, J PHYS C SOLID STATE, V7, P195

[2]

ELMORE WC, 1985, PHYSICS WAVES, P152

[3] AUGER RECOMBINATION IN MODULATED PHOTOREFLECTANCE CHARACTERIZATION OF SILICON-WAFERS [J].

FORGET, BC ;

FOURNIER, D ;

GUSEV, VE .

APPLIED PHYSICS LETTERS, 1992, 61 (19) :2341-2343

[4]

FORGET BC, 1992, PHOTOACOUSTIC PHOTOT, V3, P375

[5]

FOURNIER D, 1995, TECHNA SRL, P495

[6] THERMAL DIFFUSIVITIES OF THIN DIAMOND FILMS ON SILICON [J].

KADING, OW ;

MATTHIAS, E ;

ZACHAI, R ;

FUSSER, HJ ;

MUNZINGER, P .

[7]

KADING OW, 1994, J PHYS C SOLID STATE, V7, P619

[8]

KAPPLINGER S, 1994, J PHYS C SOLID STATE, V7, P145

[9] PHOTOTHERMAL WAVE IMAGING OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR STRUCTURES [J].

MANDELIS, A ;

WILLIAMS, A ;

SIU, EKM .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (01) :92-98

[10]

MANSANARES AM, 1994, J PHYS C SOLID STATE, V7, P207

← 1 2 3 →