Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory

被引：30

作者：

Chang, Yao-Feng ^{[1
]}

Ji, Li ^{[1
]}

Wu, Zhuo-Jie ^{[1
]}

Zhou, Fei ^{[1
]}

Wang, Yanzhen ^{[1
]}

Xue, Fei ^{[1
]}

Fowler, Burt ^{[2
]}

Yu, Edward T. ^{[1
]}

Ho, Paul S. ^{[1
]}

Lee, Jack C. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

[2] PrivaTran LLC, Austin, TX 78746 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.4816162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ambient gas effect in SiOx-based resistive switching memory has been studied. After the electroforming process, resistive switching behavior functions in vacuum as well as in nitrogen without dramatic degradation. However, introducing an oxygen-nitrogen ambient suppresses resistive switching behavior at pressures above 1 Torr. Resistive switching is fully reestablished in oxygen-exposed devices after a vacuum recovery step. The failure phenomena can be described by Monte Carlo simulation using bi-modal statistics to enable feature distribution modeling of failure modes. Design criteria and guidelines are identified for packaging of future oxygen-sensor and of nonvolatile memory applications. (C) 2013 AIP Publishing LLC.

引用

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