In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz

被引:38
作者
Khalid, Ata [1 ]
Li, C. [1 ]
Papageogiou, V. [1 ]
Dunn, G. M. [2 ]
Steer, M. J. [1 ]
Thayne, I. G. [1 ]
Kuball, M. [3 ]
Oxley, C. H. [4 ]
Montes Bajo, M. [3 ]
Stephen, A. [2 ]
Glover, J. [4 ]
Cumming, D. R. S. [1 ]
机构
[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland
[2] Univ Aberdeen, Sch Engn & Phys Sci, Aberdeen AB24 SFX, Scotland
[3] Univ Bristol, HH Wills Phys Lab, Ctr Device Thermog & Reliabil, Bristol BS8 1TL, Avon, England
[4] De Montfort Univ, Fac Technol, Dept Elect Engn, Leicester LE1 9BH, Leics, England
基金
英国工程与自然科学研究理事会;
关键词
Gallium and indium compounds; Gunn devices; millimeter-wave source; semiconductor heterojunctions; OSCILLATIONS;
D O I
10.1109/LED.2012.2224841
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present the first results of a planar Gunn diode made in In0.53Ga0.47 As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-mu m-wide device with a 1.3-mu m active channel length, the highest power achieved was approximately -10 dBm at 164 GHz.
引用
收藏
页码:39 / 41
页数:3
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