共 44 条
Cyanated Diazatetracene Diimides with Ultrahigh Electron Affinity for n-Channel Field Effect Transistors
被引:72
作者:

Ye, Qun
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机构:
Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

Chang, Jingjing
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h-index: 0
机构:
Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

Huang, Kuo-Wei
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h-index: 0
机构:
King Abdullah Univ Sci & Technol KAUST, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia
KAUST Catalysis Ctr, Thuwal 239556900, Saudi Arabia Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

Shi, Xueliang
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机构:
Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

Wu, Jishan
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h-index: 0
机构:
Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

Chi, Chunyan
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机构:
Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
机构:
[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
[2] King Abdullah Univ Sci & Technol KAUST, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia
[3] KAUST Catalysis Ctr, Thuwal 239556900, Saudi Arabia
[4] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
关键词:
NAPHTHALENE DIIMIDES;
SEMICONDUCTORS;
BISIMIDES;
TETRACENE;
DESIGN;
D O I:
10.1021/ol400082c
中图分类号:
O62 [有机化学];
学科分类号:
070303 ;
081704 ;
摘要:
Several diazatetracene diimides with high electron affinity (up to 4.66 eV!) were prepared and well characterized. The LUMO energy level of these electron-deficient molecules was found to be closely related to their material stability. Compound 7 with ultrahigh electron affinity suffered from reduction and hydrolysis in the presence of silica gel or water. The stable compounds 3 and 6 showed n-channel FET behavior with an average electron mobility of 0.002 and 0.005 cm(2) V-1 s(-1), respectively, using a solution processing method.
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页码:1194 / 1197
页数:4
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