Integrated films of transition metal oxides for information technology

The recently developed ability to grow layers of transition metal oxides with atomic precision by means of physical vapor deposition has opened up a possibility of monolithic integration of these oxides on semiconductors. Here we review the recent progress in integrating ferroelectric films with Si and Ge, and their potential applications in electronics and nanophotonics. Perovskite films described in the talk were grown by molecular beam epitaxy (MBE) and, when possible, chemical routes were tested via atomic layer deposition (ALD). Design of the structures and analysis of the experimental results were aided by density functional theory (DFT). (C) 2015 Elsevier B.V. All rights reserved.