Integrated films of transition metal oxides for information technology

被引：14

作者：

Demkov, Alexander A. ^{[1
]}

Ponath, Patrick ^{[1
]}

Fredrickson, Kurt ^{[1
]}

Posadas, Agham B. ^{[1
]}

McDaniel, Martin D. ^{[2
]}

Ngo, Thong Q. ^{[2
]}

Ekerdt, John G. ^{[2
]}

机构：

[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[2] Univ Texas Austin, Dept Chem Engn, Austin, TX 78712 USA

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 147卷

基金：

美国国家科学基金会;

关键词：

Ferroelectrics; Monolithic integration; MBE; ALD; Density functional theory; EPITAXIAL BATIO3 FILMS; THIN-FILMS; OXYGEN MOLECULE; SI(100) SURFACE; SI(001) SURFACE; INITIAL-STAGE; OXIDATION; GROWTH; SILICON; SRTIO3;

D O I：

10.1016/j.mee.2015.04.090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The recently developed ability to grow layers of transition metal oxides with atomic precision by means of physical vapor deposition has opened up a possibility of monolithic integration of these oxides on semiconductors. Here we review the recent progress in integrating ferroelectric films with Si and Ge, and their potential applications in electronics and nanophotonics. Perovskite films described in the talk were grown by molecular beam epitaxy (MBE) and, when possible, chemical routes were tested via atomic layer deposition (ALD). Design of the structures and analysis of the experimental results were aided by density functional theory (DFT). (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：285 / 289

页数：5

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