Confinement of Electrons at the LaInO3/BaSnO3 Heterointerface

被引：8
作者：
Pfuetzenreuter, Daniel [1 ]
Kim, Seonghyeon [2 ]
Cho, Hyeongmin [2 ]
Bierwagen, Oliver [3 ]
Zupancic, Martina [1 ]
Albrecht, Martin [1 ]
Char, Kookrin [2 ]
Schwarzkopf, Jutta [1 ]
机构：
[1] Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany
[2] Seoul Natl Univ, Dept Phys & Astron, Inst Appl Phys, Seoul 08826, South Korea
[3] Leibniz Inst Forsch Verbund Berlin eV, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany
来源：
ADVANCED MATERIALS INTERFACES | 2022年 / 9卷 / 35期
关键词：
2D electron gas; BaSnO; (3); LaInO; persovskite; transparent conducting oxides; SUPERCONDUCTIVITY; COEXISTENCE;
D O I：
10.1002/admi.202201279
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The properties of the conductance at the LaInO3/BaSnO3 heterointerface are reported. The heterointerface is formed by covering the semi-insulating BaSnO3:La thin films with 10 nm LaInO3 films, which are all epitaxially grown on NdScO3 substrates. Structural properties of BaSnO3 thin films are investigated by means of X-ray diffraction and transmission electron microscopy and exhibit a threading dislocation density of 6 x 10(10) cm(-2). Via capacitance-voltage (C-V) measurements, clear evidence is present for the accumulation of electrons at the interface within 2.5 nm in the BaSnO3 layer, confirming the formation of a 2D electron gas (2DEG). Additionally, temperature dependent Hall effect measurements reveal a semiconducting behavior of the electron density of the 2DEGs. The room temperature mobility of 22 cm(2) V-1 s(-1) at an electron density of 4 x 10(13) cm(-2) is found to increase as the temperature decreases to 25 K.
引用
收藏
页数：8
相关论文
共 42 条
  • [1] Tuning two-dimensional electron and hole gases at LaInO3/BaSnO3 interfaces by polar distortions, termination, and thickness
    Aggoune, Wahib
    Draxl, Claudia
    [J]. NPJ COMPUTATIONAL MATERIALS, 2021, 7 (01)
  • [2] Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal-organic vapor phase epitaxy
    Baki, Aykut
    Stoever, Julian
    Schulz, Tobias
    Markurt, Toni
    Amari, Houari
    Richter, Carsten
    Martin, Jens
    Irmscher, Klaus
    Albrecht, Martin
    Schwarzkopf, Jutta
    [J]. SCIENTIFIC REPORTS, 2021, 11 (01)
  • [3] Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface
    Bert, Julie A.
    Kalisky, Beena
    Bell, Christopher
    Kim, Minu
    Hikita, Yasuyuki
    Hwang, Harold Y.
    Moler, Kathryn A.
    [J]. NATURE PHYSICS, 2011, 7 (10) : 767 - 771
  • [4] Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction
    Chambers, S. A.
    Engelhard, M. H.
    Shutthanandan, V.
    Zhu, Z.
    Droubay, T. C.
    Qiao, L.
    Sushko, P. V.
    Feng, T.
    Lee, H. D.
    Gustafsson, T.
    Garfunkel, E.
    Shah, A. B.
    Zuo, J-M
    Ramasse, Q. M.
    [J]. SURFACE SCIENCE REPORTS, 2010, 65 (10-12) : 317 - 352
  • [5] Epitaxial BaSnO3 and SrSnO3 perovskite growth on SrTiO3(001) via atomic layer deposition
    Chen, Pei-Yu
    Lam, Chon Hei
    Edmondson, Bryce
    Posadas, Agham B.
    Demkov, Alexander A.
    Ekerdt, John G.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2019, 37 (05):
  • [6] High-Mobility Field-Effect Transistor Using 2-Dimensional Electron Gas at the LaScO3/BaSnO3 Interface
    Cho, Hyeongmin
    Song, Dowon
    Kim, Youjung
    Kim, Bongju
    Char, Kookrin
    [J]. ACS APPLIED ELECTRONIC MATERIALS, 2022, 4 (01) : 356 - 366
  • [7] Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis
    Dinara, Syed Mukulika
    Jana, Sanjay Kr.
    Ghosh, Saptarsi
    Mukhopadhyay, Partha
    Kumar, Rahul
    Chakraborty, Apurba
    Bhattacharya, Sekhar
    Biswas, Dhrubes
    [J]. AIP ADVANCES, 2015, 5 (04):
  • [8] Oxide Two-Dimensional Electron Gas with High Mobility at Room-Temperature
    Eom, Kitae
    Paik, Hanjong
    Seo, Jinsol
    Campbell, Neil
    Tsymbal, Evgeny Y.
    Oh, Sang Ho
    Rzchowski, Mark S.
    Schlom, Darrell G.
    Eom, Chang-Beom
    [J]. ADVANCED SCIENCE, 2022, 9 (12)
  • [9] Melt growth and properties of bulk BaSnO3 single crystals
    Galazka, Z.
    Uecker, R.
    Irmscher, K.
    Klimm, D.
    Bertram, R.
    Kwasniewski, A.
    Naumann, M.
    Schewski, R.
    Pietsch, M.
    Juda, U.
    Fiedler, A.
    Albrecht, M.
    Ganschow, S.
    Markurt, T.
    Guguschev, C.
    Bickermann, M.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 29 (07)
  • [10] Melt Growth and Physical Properties of Bulk LaInO3 Single Crystals
    Galazka, Zbigniew
    Irmscher, Klaus
    Ganschow, Steffen
    Zupancic, Martina
    Aggoune, Wahib
    Draxl, Claudia
    Albrecht, Martin
    Klimm, Detlef
    Kwasniewski, Albert
    Schulz, Tobias
    Pietsch, Mike
    Dittmar, Andrea
    Grueneberg, Raimund
    Juda, Uta
    Schewski, Robert
    Bergmann, Sabine
    Cho, Hyeongmin
    Char, Kookrin
    Schroeder, Thomas
    Bickermann, Matthias
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 218 (16):
12345