Effects of a Heavy Atom on Molecular Order and Morphology in Conjugated Polymer:Fullerene Photovoltaic Blend Thin Films and Devices

被引:72
作者
Tsoi, Wing C. [1 ,2 ]
James, David T. [1 ]
Domingo, Ester Buchaca [3 ,4 ]
Kim, Jong Soo [1 ]
Al-Hashimi, Mohammed [5 ]
Murphy, Craig E. [2 ]
Stingelin, Natalie [3 ,4 ]
Heeney, Martin [5 ]
Kim, Ji-Seon [1 ,6 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2AZ, England
[2] Natl Phys Lab, Teddington TW11 0LW, Middx, England
[3] Univ London Imperial Coll Sci Technol & Med, London Royal Sch Mines, Dept Mat, London SW7 2AZ, England
[4] Univ London Imperial Coll Sci Technol & Med, London Royal Sch Mines, Ctr Plast Elect, London SW7 2AZ, England
[5] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England
[6] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
基金
英国工程与自然科学研究理事会;
关键词
poly(3-hexylselenophene); poly(3-hexylthiophene); 6,6]-phenyl-C-61-butyric acid methyl ester; molecular order; resonant Raman spectroscopy; HETEROJUNCTION SOLAR-CELLS; OPEN-CIRCUIT VOLTAGE; POLYMER; POLY(3-HEXYLSELENOPHENE); POLY(3-HEXYLTHIOPHENE); CRYSTALLIZATION; NANOMORPHOLOGY; DYNAMICS; DENSITY;
D O I
10.1021/nn304024g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We study the molecular order and morphology in poly(3-hexylthiophene) (P3HT) and poly(3-hexylselenophene) (P3HS) thin films and their blends with [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM). We find that substitution of the sulfur atoms in the thiophene rings of P3HT by heavy selenium atoms increases the tendency of the molecules to form better ordered phase; interestingly, their overall fraction of ordered phase is much lower than that of P3HT-based films. The higher tendency of P3HS molecules to order (aggregate) is consistent with more planar chain conformation simulated. The lower fraction of ordered phase (or the higher fraction of disordered phase) in P3HS-based films is clearly Identified by in-plane skeleton Raman modes under resonant excitation conditions, such as a smaller ratio of the C=C modes associated with the ordered (similar to 1422 cm(-1)) and disordered (similar to 1446 cm(-1)) phases (I1422cm-1/I1446cm-1 = 1.4 for P3HS and 0.6 for P3HS:PCBM), compared with P3HT-based films (I1449cm-1/I1470cm-1 = 2.5 for P3HT and 1.0 for P3HT:PCBM) and a larger Raman dispersion of the C=C mode: P3HS(17 cm(-1)) versus P3HT (6 cm(-1)) and P3HS:PCBM (36 cm(-1)) versus P3HT:PCBM films (23 cm(-1)). The higher fraction of disordered phase in P3HS prevents the formation of micrometer-sized PCBM aggregates in blend films during thermal annealing. Importantly, this lower fraction but better quality of ordered phase in P3HS molecules strongly Influences P3HS:PCBM photovoltaic performance, producing smaller short-circuit current (J(sc)) in pristine devices, but significantly larger Increase in J(sc), after annealing compared to P3HT :PCBM devices. Our results clarify the effects of heavy atom substitution in low band gap polymers and their impact on blend morphology and device performance. Furthermore, our study clearly demonstrates resonant Raman spectroscopy as a simple, but powerful, structural probe which provides Important information about "fraction/quantity of ordered phase" of molecules, not easily accessible using traditional X-ray-based techniques.
引用
收藏
页码:9646 / 9656
页数:11
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