A vertical cavity light emitting InGaN quantum well heterostructure

被引：62
作者：
Song, YK [1 ]
Zhou, H
Diagne, M
Ozden, I
Vertikov, A
Nurmikko, AV
Carter-Coman, C
Kern, RS
Kish, FA
Krames, MR
机构：
[1] Brown Univ, Div Engn, Providence, RI 02912 USA
[2] Brown Univ, Dept Phys, Providence, RI 02912 USA
[3] Hewlett Packard Co, Div Optoelect, San Jose, CA 95131 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 23期
关键词：
D O I：
10.1063/1.124121
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A method is described for fabricating a vertical cavity light emitting structure for nitride semiconductors. The process involves the separation of a InGaN/GaN/AlGaN quantum well heterostructure from its sapphire substrate an its enclosure by a pair of high reflectivity, low loss dielectric mirrors to define the optical resonator. We have demonstrated a cavity Q factor exceeding 600 in initial experiments, suggesting that the approach can be useful for blue and near ultraviolet resonant cavity light emitting diodes and vertical cavity lasers. (C) 1999 American Institute of Physics. [S0003-6951(99)00823-2].
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页码：3441 / 3443
页数：3
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