Modifying Surface Energy of Graphene via Plasma-Based Chemical Functionalization to Tune Thermal and Electrical Transport at Metal Interfaces

被引:71
作者
Foley, Brian M. [1 ]
Hernandez, Sandra C. [2 ]
Duda, John C. [1 ]
Robinson, Jeremy T. [3 ]
Walton, Scott G. [2 ]
Hopkins, Patrick E. [1 ]
机构
[1] Univ Virginia, Dept Mech & Aerosp Engn, Charlottesville, VA 22904 USA
[2] Naval Res Lab, Div Plasma Phys, Washington, DC 20375 USA
[3] Naval Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA
关键词
Graphene; contacts; functionalization; thermal boundary conductance; contact resistivity; SINGLE-LAYER; TRANSISTORS; CONTACTS;
D O I
10.1021/acs.nanolett.5b00381
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The high mobility exhibited by both supported and suspended graphene, as well as its large in-plane thermal conductivity, has generated much excitement across a variety of applications. As exciting as these properties are, one of the principal issues inhibiting the development of graphene technologies pertains to difficulties in engineering high-quality metal contacts on graphene. As device dimensions decrease, the thermal and electrical resistance at the metal/graphene interface. plays a dominant role in degrading overall performance. Here we demonstrate the use of a low energy, electron-beam plasma to functionalize graphene with oxygen, fluorine, and nitrogen groups, as a method to tune the thermal and electrical transport properties across gold-single layer graphene (Au/SLG) interfaces. We find that while oxygen and nitrogen groups improve the thermal boundary conductance (h(K)) at the interface, their presence impairs electrical transport leading to increased contact resistance (rho(C)). Conversely, functionalization with fluorine has no impact on h(K) yet rho(C) decreases with increasing coverage densities. These findings indicate exciting possibilities using plasma-based chemical functionalization to tailor the thermal and electrical transport properties of metal/2D material contacts.
引用
收藏
页码:4876 / 4882
页数:7
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