Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application

被引：23

作者：

Wu, Liangcai ^{[1
]}

Zhu, Min ^{[1
,2
]}

Song, Zhitang ^{[1
]}

Lv, Shilong ^{[1
]}

Zhou, Xilin ^{[1
,2
]}

Peng, Cheng ^{[1
]}

Rao, Feng ^{[1
]}

Song, Sannian ^{[1
]}

Liu, Bo ^{[1
]}

Feng, Songlin ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100080, Peoples R China

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2012年 / 358卷 / 17期

关键词：

Sb-rich; Sb65Se6Te29; Phase change; Reset;

D O I：

10.1016/j.jnoncrysol.2011.12.087

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Sb-rich Sb65Se6Te29 film was investigated for phase change random access memory (PCRAM) application. The crystallization temperature of the Sb65Se6Te29 film is 174 degrees C and the crystalline activation energy is about 2.7 eV. The 10-years' failure temperature for the Sb65Se6Te29 film is about 87 degrees C. sufficient for most consumer applications. The results of UV/visible/NIR spectrophotometer measurements show that the optical gap of the Sb65Se6Te29 film decreases as it transforms from amorphous phase to crystalline phase. Compared with the Ge2Sb2Te5 based PCRAM cell, the Sb65Se6Te29 based PCRAM cell has the advantages of lower threshold voltage and larger resistance contrast. Furthermore, as short as 10 ns electrical pulse can achieve Reset operation with a Reset voltage of 2.9 V. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：2409 / 2411

页数：3

共 50 条

[31] Phase Transition Kinetics of Sb2Te3 Phase Change Thin Films
Zhai, Fengxiao
Wang, Yang
Wu, Yiqun
Gan, Fuxi
[J]. EIGHTH INTERNATIONAL SYMPOSIUM ON OPTICAL STORAGE AND 2008 INTERNATIONAL WORKSHOP ON INFORMATION DATA STORAGE, 2009, 7125
[32] Sb7Te3/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory
Chen, Shiyu
Wu, Weihua
Zhai, Jiwei
Song, Sannian
Song, Zhitang
[J]. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2017, 218 : 59 - 63
[33] High speed rewritable DVD up to 20m/s with nucleation-free eutectic phase-change material of Ge(Sb70Te30)+Sb
Horie, M
Nobukuni, N
Kiyono, K
Ohno, T
[J]. OPTICAL DATA STORAGE 2000, 2000, 4090 : 135 - 143
[34] Microstructural studies of direct-overwrite (DOW) Ag-In-Sb-Te phase-change optical recording media
Price, SJ
Greer, AL
Davies, CE
[J]. OPTICAL DATA STORAGE 2000, 2000, 4090 : 122 - 130
[35] Fabrication of highly responsive phase-change Ge2Sb2Te5 photodetector for visible region
V Srivastava
P Mishra
[J]. Indian Journal of Physics, 2021, 95 : 947 - 955
[36] Fabrication of highly responsive phase-change Ge2Sb2Te5 photodetector for visible region
Srivastava, V
Mishra, P.
Sunny
[J]. INDIAN JOURNAL OF PHYSICS, 2021, 95 (05) : 947 - 955
[37] Potentiality of the Ag-In-Sb-Te phase change recording material for high density erasable optical discs
Shinotsuka, M
Shibaguchi, T
Abe, M
Ide, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (1B): : 536 - 538
[38] Study on nitrogen doped Ge2Sb2Te5 films for phase change memory
Min-Jung Shin
Suk-Min Kim
Doo-Jin Choi
Kye-Nam Lee
Suk Kyoung Hong
Young-Jin Park
[J]. Journal of Materials Science, 2005, 40 : 1543 - 1545
[39] Reversibility and Stability of ZnO-Sb2Te3 Nanocomposite Films for Phase Change Memory Applications
Wang, Guoxiang
Chen, Yimin
Shen, Xiang
Li, Junjian
Wang, Rongping
Lu, Yegang
Dai, Shixun
Xu, Tiefeng
Nie, Qiuhua
[J]. ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (11) : 8488 - 8496
[40] Modeling of two different operation modes of phase change material for phase-change random-access memory
Zhang, Y
Feng, J
Wang, H
Cai, BC
Chen, B
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4A): : 1687 - 1692

← 1 2 3 4 5 →