Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application

被引：23

作者：

Wu, Liangcai ^{[1
]}

Zhu, Min ^{[1
,2
]}

Song, Zhitang ^{[1
]}

Lv, Shilong ^{[1
]}

Zhou, Xilin ^{[1
,2
]}

Peng, Cheng ^{[1
]}

Rao, Feng ^{[1
]}

Song, Sannian ^{[1
]}

Liu, Bo ^{[1
]}

Feng, Songlin ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100080, Peoples R China

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2012年 / 358卷 / 17期

关键词：

Sb-rich; Sb65Se6Te29; Phase change; Reset;

D O I：

10.1016/j.jnoncrysol.2011.12.087

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Sb-rich Sb65Se6Te29 film was investigated for phase change random access memory (PCRAM) application. The crystallization temperature of the Sb65Se6Te29 film is 174 degrees C and the crystalline activation energy is about 2.7 eV. The 10-years' failure temperature for the Sb65Se6Te29 film is about 87 degrees C. sufficient for most consumer applications. The results of UV/visible/NIR spectrophotometer measurements show that the optical gap of the Sb65Se6Te29 film decreases as it transforms from amorphous phase to crystalline phase. Compared with the Ge2Sb2Te5 based PCRAM cell, the Sb65Se6Te29 based PCRAM cell has the advantages of lower threshold voltage and larger resistance contrast. Furthermore, as short as 10 ns electrical pulse can achieve Reset operation with a Reset voltage of 2.9 V. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：2409 / 2411

页数：3

共 50 条

[21] Controlled Self-Assembly of Nanoscale Superstructures in Phase-Change Ge-Sb-Te Nanowires
Modi, Gaurav
Meng, Andrew C.
Rajagopalan, Srinivasan
Thiruvengadam, Rangarajan
Davies, Peter K.
Stach, Eric A.
Agarwal, Ritesh
NANO LETTERS, 2024, 24 (19) : 5799 - 5807
[22] Crystallization of Ge2Sb2Te5 phase-change optical disk media
Liu, B
Ruan, H
Gan, FX
CHINESE PHYSICS, 2002, 11 (03): : 293 - 297
[23] Study of Si-doped Sb2Te3 film for low power and good data retention phase-change memory application
Zhang, Yin
Feng, Jie
Cai, Bingchu
EIGHTH INTERNATIONAL SYMPOSIUM ON OPTICAL STORAGE AND 2008 INTERNATIONAL WORKSHOP ON INFORMATION DATA STORAGE, 2009, 7125
[24] In-Sb phase-change material for 16x rewritable digital versatile disk
Suzuki, E
Miura, H
Harigaya, M
Ito, K
Iwata, N
Watada, A
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (5B): : 3598 - 3600
[25] Switching at the contacts in Ge9Sb1Te5 phase-change nanowire devices
Alialy, Sahar
Gabriel, Michelle
Davitt, Fionan
Holmes, Justin D.
Boland, John J.
NANOTECHNOLOGY, 2019, 30 (33)
[26] Structure and phase change in Cu-Ge3Sb2Te5 films for use in phase change random access memory
Sun Jing-Yang
Wang Dong-Ming
Lu Ye-Gang
Wang Miao
Wang Yi-Man
Shen Xiang
Wang Guo-Xiang
Dai Shi-Xun
ACTA PHYSICA SINICA, 2015, 64 (01)
[27] Potential of Ge-Sb-Te phase-change optical disks for high-data-rate recording
Yamada, N
OPTICAL DATA STORAGE '97, 1997, 3109 : 28 - 37
[28] Quantitative study of nitrogen doping effect on cyclability of Ge-Sb-Te phase-change optical disks
Kojima, R
Kouzaki, T
Matsunaga, T
Yamada, N
OPTICAL DATA STORAGE '98, 1998, 3401 : 14 - 23
[29] Electrical Properties of Cr-doped Sb2Te3 Phase Change Material
Wang, Qing
Liu, Bo
Xia, Yangyang
Zheng, Yonghui
Song, Sannian
Cheng, Yan
Song, Zhitang
Feng, Songlin
2016 INTERNATIONAL WORKSHOP ON INFORMATION DATA STORAGE AND TENTH INTERNATIONAL SYMPOSIUM ON OPTICAL STORAGE, 2016, 9818
[30] Minimal phase-change marks produced in amorphous Ge2Sb2Te5 films
Gotoh, T
Sugawara, K
Tanaka, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6B): : L818 - L821

← 1 2 3 4 5 →