Organic Thin Film Transistors Fabricated with a Triisopropylsilyl-Pentacene Active Channel Layer and Multi stacked Oxide Electrodes

We report the fabrication of triisopropylsilyl (TIPS)-pentacene-based thin-film transistors (TFTs) consisting of a nickel oxide-indium tin oxide (NIO-ITO) multi stacked source/drain (S/D) electrode, a poly(4-vinylphenol) (PVP) gate dielectric, and a Ni gate electrode. The NiO-ITO multi stacked S/D electrode work function agrees well with to that of the TIPS-pentacene active channel layer. The TIPS-pentacene-based TFT maximum saturation current is about 9.1 mu A at a gate bias of -40V, representing a high field effect mobility of 0.03 cm(2) V-1 S-1 in the dark, and the on/off current ratio TFT is about 10(5). We concluded that combining the NiO-ITO multi stacked S/D electrodes with PVP for the gate dielectric yields a high-quality TIPS-pentacene-based TFT. (C) 2009 The Japan Society of Applied Physics